Справочник MOSFET. NCE01H21T

 

NCE01H21T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE01H21T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 385 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 210 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 1061 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO247
     - подбор MOSFET транзистора по параметрам

 

NCE01H21T Datasheet (PDF)

 ..1. Size:308K  ncepower
nce01h21t.pdfpdf_icon

NCE01H21T

Pb Free Producthttp://www.ncepower.com NCE01H21TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features VDSS =100V,ID =210A RDS(ON)

 8.1. Size:358K  ncepower
nce01h13.pdfpdf_icon

NCE01H21T

Pb Free ProductNCE01H13http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 8.2. Size:458K  ncepower
nce01h13d.pdfpdf_icon

NCE01H21T

NCE01H13Dhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 8.3. Size:416K  ncepower
nce01h11.pdfpdf_icon

NCE01H21T

Pb Free Producthttp://www.ncepower.com NCE01H11NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FQU8P10 | NCEP026N10F | HY75N075T | SI7913DN | JCS5N50CT | MC11N005 | NVMFS5C628N

 

 
Back to Top

 


 
.