Справочник MOSFET. NCE01H21T

 

NCE01H21T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE01H21T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 385 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 210 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 377 nC
   tr ⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 1061 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для NCE01H21T

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE01H21T Datasheet (PDF)

 ..1. Size:308K  ncepower
nce01h21t.pdfpdf_icon

NCE01H21T

Pb Free Producthttp://www.ncepower.com NCE01H21TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features VDSS =100V,ID =210A RDS(ON)

 8.1. Size:358K  ncepower
nce01h13.pdfpdf_icon

NCE01H21T

Pb Free ProductNCE01H13http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 8.2. Size:458K  ncepower
nce01h13d.pdfpdf_icon

NCE01H21T

NCE01H13Dhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 8.3. Size:416K  ncepower
nce01h11.pdfpdf_icon

NCE01H21T

Pb Free Producthttp://www.ncepower.com NCE01H11NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON)

Другие MOSFET... NCE0140KA , NCE0157 , NCE0157A2 , NCE0157D , NCE01H10 , NCE01H10D , NCE01H11 , NCE01H13 , IRF9540 , NCE01P03S , NCE01P13K , NCE01P18D , NCE01P18K , NCE01P30 , NCE0202M , NCE0202ZA , NCE0208KA .

History: WMM53N60F2 | SML100B11F | IPP50R250CP

 

 
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