Справочник MOSFET. NCE0208KA

 

NCE0208KA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE0208KA
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для NCE0208KA

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE0208KA Datasheet (PDF)

 ..1. Size:433K  ncepower
nce0208ka.pdfpdf_icon

NCE0208KA

Pb Free Producthttp://www.ncepower.com NCE0208KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 7.1. Size:322K  ncepower
nce0208ia.pdfpdf_icon

NCE0208KA

Pb Free Producthttp://www.ncepower.com NCE0208IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 8.1. Size:305K  ncepower
nce0205ia.pdfpdf_icon

NCE0208KA

http://www.ncepower.com NCE0205IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON)

 8.2. Size:287K  ncepower
nce0202za.pdfpdf_icon

NCE0208KA

Pb Free Producthttp://www.ncepower.com NCE0202ZANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0202ZA uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 200V,ID =2A RDS(ON)

Другие MOSFET... NCE01H21T , NCE01P03S , NCE01P13K , NCE01P18D , NCE01P18K , NCE01P30 , NCE0202M , NCE0202ZA , IRFP260 , NCE0224 , NCE0224D , NCE0224K , NCE0240 , NCE0240F , NCE0260 , NCE0275T , NCE1216 .

History: DMN2009LSS | TK15J60T | SVD540DTR | IRFPF20 | NCE1505S | SMK0765F | SM1200NSAS

 

 
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