NCE1216 - описание и поиск аналогов

 ..1. Size:248K  ncepower
 nce1216.pdf 

Pb Free Product http //www.ncepower.com NCE1216 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram

 9.1. Size:465K  ncepower
 nce1205.pdf 

Pb Free Product http //www.ncepower.com NCE1205 N and P-Channel Enhancement Mode Power MOSFET Description The NCE1205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channel VDS =1

 9.2. Size:722K  ncepower
 nce1230sp.pdf 

http //www.ncepower.com NCE1230SP NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE1230SP uses advanced trench technology to provide V =12V,I =30A SSS S excellent R , low gate charge and operation with gate SS(ON) R on =1.0m (typical) @ V =4.5V SS( ) GS voltages as low as 2.5V while retaining a 8V V rating. It is GS(

 9.3. Size:285K  ncepower
 nce12p09s.pdf 

http //www.ncepower.com NCE12P09S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features VDS = -12V,ID = -9A Schematic diagram

 9.4. Size:1355K  ncepower
 nce120ed120vtp4.pdf 

NCE120ED120VTP4 1200V, 120A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.60

 9.5. Size:488K  ncepower
 nce1227sp.pdf 

http //www.ncepower.com NCE1227SP NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE1227SP uses advanced trench technology to provide VSSS =12V,IS =27A excellent RSS(ON), low gate charge and operation with gate RSS(on)=2.1m (typical) @ VGS=4.5V voltages as low as 2.5V while retaining a 8V VGS(MAX) rating. It is

 9.6. Size:1440K  ncepower
 nce120ed120vtp.pdf 

NCE120ED120VTP 1200V, 120A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.60V

 9.7. Size:468K  ncepower
 nce1220sp.pdf 

http //www.ncepower.com NCE1220SP NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE1220SP uses advanced trench technology to provide VSSS =12V,IS =20A excellent RSS(ON), low gate charge and operation with gate RSS(on)=3.6m (typical) @ VGS=4.5V voltages as low as 2.5V while retaining a 10V VGS(MAX) rating. It is