NCE2304 - описание и поиск аналогов

 

Аналоги NCE2304. Основные параметры


   Наименование производителя: NCE2304
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для NCE2304

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE2304 даташит

 ..1. Size:344K  ncepower
nce2304.pdfpdf_icon

NCE2304

Pb Free Product http //www.ncepower.com NCE2304 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE2304 uses advanced trench technology to provide G excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = 30V,ID = 3.6A RDS(ON)

 8.1. Size:262K  ncepower
nce2301a.pdfpdf_icon

NCE2304

Pb Free Product http //www.ncepower.com NCE2301A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -15V,ID = -3.0A Schematic diagram

 8.2. Size:257K  ncepower
nce2301c.pdfpdf_icon

NCE2304

Pb Free Product http //www.ncepower.com NCE2301C NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -15V,

 8.3. Size:330K  ncepower
nce2301e.pdfpdf_icon

NCE2304

Pb Free Product http //www.ncepower.com NCE2301E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

Другие MOSFET... NCE2030 , NCE2030K , NCE2060K , NCE20P45Q , NCE20P70G , NCE2301 , NCE2302 , NCE2303 , TK10A60D , NCE2305 , NCE2309 , NCE2312 , NCE2312A , NCE2333Y , NCE3008M , NCE3011E , NCE3018AS .

 

 
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