Справочник MOSFET. NCE2304

 

NCE2304 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE2304
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для NCE2304

 

 

NCE2304 Datasheet (PDF)

 ..1. Size:344K  ncepower
nce2304.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2304NCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE2304 uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = 30V,ID = 3.6A RDS(ON)

 8.1. Size:262K  ncepower
nce2301a.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2301ANCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -15V,ID = -3.0A Schematic diagram

 8.2. Size:257K  ncepower
nce2301c.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2301CNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -15V,

 8.3. Size:330K  ncepower
nce2301e.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2301ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 8.4. Size:350K  ncepower
nce2309.pdf

NCE2304
NCE2304

http://www.ncepower.com NCE2309NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2309 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-1.6A Schematic diagram RDS(ON)

 8.5. Size:234K  ncepower
nce2302.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2302NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features

 8.6. Size:329K  ncepower
nce2303.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2303NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2303 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -2.0A Schematic diagram RDS(ON)

 8.7. Size:637K  ncepower
nce2308x.pdf

NCE2304
NCE2304

http://www.ncepower.comNCE2308XNCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE2308X uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =3ADS DR

 8.8. Size:242K  ncepower
nce2302c.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2302CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Schematic diagram VD

 8.9. Size:308K  ncepower
nce2305a.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2305ANCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE2305A uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -12V,

 8.10. Size:241K  ncepower
nce2301.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2301NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -20V,ID = -3A

 8.11. Size:261K  ncepower
nce2301f.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2301FNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,

 8.12. Size:249K  ncepower
nce2301d.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2301DNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,

 8.13. Size:335K  ncepower
nce2305.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2305NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -20V,ID

 8.14. Size:245K  ncepower
nce2302b.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2302BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VD

 8.15. Size:250K  ncepower
nce2301b.pdf

NCE2304
NCE2304

Pb Free Producthttp://www.ncepower.com NCE2301BNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,

 8.16. Size:1748K  cn vbsemi
nce2305a.pdf

NCE2304
NCE2304

NCE2305Awww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

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