NCE2304 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE2304
Маркировка: 2304'
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 4 nC
trⓘ - Время нарастания: 50 ns
Cossⓘ - Выходная емкость: 40 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm
Тип корпуса: SOT23
NCE2304 Datasheet (PDF)
nce2304.pdf
Pb Free Producthttp://www.ncepower.com NCE2304NCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE2304 uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = 30V,ID = 3.6A RDS(ON)
nce2301a.pdf
Pb Free Producthttp://www.ncepower.com NCE2301ANCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -15V,ID = -3.0A Schematic diagram
nce2301c.pdf
Pb Free Producthttp://www.ncepower.com NCE2301CNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -15V,
nce2301e.pdf
Pb Free Producthttp://www.ncepower.com NCE2301ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features
nce2309.pdf
http://www.ncepower.com NCE2309NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2309 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-1.6A Schematic diagram RDS(ON)
nce2302.pdf
Pb Free Producthttp://www.ncepower.com NCE2302NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features
nce2303.pdf
Pb Free Producthttp://www.ncepower.com NCE2303NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2303 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -2.0A Schematic diagram RDS(ON)
nce2308x.pdf
http://www.ncepower.comNCE2308XNCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE2308X uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =3ADS DR
nce2302c.pdf
Pb Free Producthttp://www.ncepower.com NCE2302CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Schematic diagram VD
nce2305a.pdf
Pb Free Producthttp://www.ncepower.com NCE2305ANCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE2305A uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -12V,
nce2301.pdf
Pb Free Producthttp://www.ncepower.com NCE2301NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -20V,ID = -3A
nce2301f.pdf
Pb Free Producthttp://www.ncepower.com NCE2301FNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,
nce2301d.pdf
Pb Free Producthttp://www.ncepower.com NCE2301DNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,
nce2305.pdf
Pb Free Producthttp://www.ncepower.com NCE2305NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -20V,ID
nce2302b.pdf
Pb Free Producthttp://www.ncepower.com NCE2302BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VD
nce2301b.pdf
Pb Free Producthttp://www.ncepower.com NCE2301BNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,
nce2305a.pdf
NCE2305Awww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23
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Список транзисторов
Обновления
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