NCE30D0808J - описание и поиск аналогов

 ..1. Size:284K  ncepower
 nce30d0808j.pdf 

Pb Free Product http //www.ncepower.com NCE30D0808J NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30D0808J uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features VDS = 30V,ID = 7.7A Schematic diagram RDS(ON)

 8.1. Size:454K  ncepower
 nce30d2519k.pdf 

Pb Free Product NCE30D2519K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE30D2519K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel VDS =30V,ID =25A Schematic diagram RDS(ON)

 9.1. Size:331K  ncepower
 nce30h10g.pdf 

http //www.ncepower.com NCE30H10G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =100A used in a wide variety of applications. RDS(ON)=1.9m (typical) @ VGS=10V RDS(ON)=2.9m (typical) @ VGS=4.5V Application DC/

 9.2. Size:388K  ncepower
 nce3018as.pdf 

 9.3. Size:356K  ncepower
 nce30nd07s.pdf 

Pb Free Product NCE30ND07S http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =30V,ID =7A RDS(ON)

 9.4. Size:308K  ncepower
 nce3013j.pdf 

http //www.ncepower.com NCE3013J NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3013J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =13A RDS(ON)

 9.5. Size:384K  ncepower
 nce3080k.pdf 

Pb Free Product http //www.ncepower.com NCE3080K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 9.6. Size:425K  ncepower
 nce30np07s.pdf 

http //www.ncepower.com NCE30NP07S N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5

 9.7. Size:741K  ncepower
 nce3030q.pdf 

http //www.ncepower.com NCE3030Q NCE N-Channel Enhancement Mode Power MOSFET General Features V =30V,I =30A Description DS D The NCE3030Q uses advanced trench technology and R

 9.8. Size:334K  ncepower
 nce30p25s.pdf 

Pb Free Product http //www.ncepower.com NCE30P25S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON)

 9.9. Size:1027K  ncepower
 nce30td60bp.pdf 

 9.10. Size:385K  ncepower
 nce3090k.pdf 

Pb Free Product http //www.ncepower.com NCE3090K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =90A RDS(ON) =4.1m (typical) @ VGS=10V Schematic diagram RDS(ON) =5.9m (typi

 9.11. Size:754K  ncepower
 nce30h15bg.pdf 

http //www.ncepower.com NCE30H15BG NCE N-Channel Enhancement Mode Power MOSFET General Features V =30V,I =150A DS D Description R

 9.12. Size:577K  ncepower
 nce30p55k.pdf 

NCE30P55K http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-30V,I =-55A DS D Schematic diagram R

 9.13. Size:372K  ncepower
 nce3050ka.pdf 

 9.14. Size:356K  ncepower
 nce3095k.pdf 

http //www.ncepower.com NCE3095K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3095K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =95A Schematic diagram RDS(ON)

 9.15. Size:332K  ncepower
 nce3025q.pdf 

NCE3025Q http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3025Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

 9.16. Size:417K  ncepower
 nce30h14k.pdf 

http //www.ncepower.com NCE30H14K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H14K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =140A RDS(ON)

 9.17. Size:358K  ncepower
 nce30td120ut.pdf 

PbFreeProduct NCE30TD120UT 1200V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.18. Size:729K  ncepower
 nce30p40k.pdf 

http //www.ncepower.com NCE30P40K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P40K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V = -30V,I = -40A Schematic diagram DS D R =7.8m @ V = -10V (Typ) DS(ON) GS R =11.5m @ V = -4.5V

 9.19. Size:348K  ncepower
 nce30p50g.pdf 

Pb Free Product http //www.ncepower.com NCE30P50G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P50G uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDS =-30V,ID =-50A S RDS(ON)

 9.20. Size:341K  ncepower
 nce30p15s.pdf 

Pb Free Product http //www.ncepower.com NCE30P15S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON)

 9.21. Size:352K  ncepower
 nce30h12.pdf 

Pb Free Product http //www.ncepower.com NCE30H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

 9.22. Size:441K  ncepower
 nce30h15k.pdf 

Pb Free Product http //www.ncepower.com NCE30H15K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

 9.23. Size:416K  ncepower
 nce30h29d.pdf 

Pb Free Product http //www.ncepower.com NCE30H29D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V ,ID =290A Schematic diagram RDS(ON)

 9.24. Size:256K  ncepower
 nce30p28q.pdf 

http //www.ncepower.com NCE30P28Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Schematic diagram General Features VDS = -30V,ID = -28A RDS(ON)

 9.25. Size:380K  ncepower
 nce30np1812k.pdf 

NCE30NP1812K http //www.ncepower.com N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =30V,ID =18A

 9.26. Size:336K  ncepower
 nce3050.pdf 

Pb Free Product http //www.ncepower.com NCE3050 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

 9.27. Size:658K  ncepower
 nce30td60bd.pdf 

PbFreeProduct NCE30TD60BD 600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed

 9.28. Size:331K  ncepower
 nce3035g.pdf 

Pb Free Product http //www.ncepower.com NCE3035G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)

 9.29. Size:312K  ncepower
 nce3080i.pdf 

Pb Free Product http //www.ncepower.com NCE3080I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 9.30. Size:321K  ncepower
 nce3080l.pdf 

 9.31. Size:268K  ncepower
 nce3008m.pdf 

Pb Free Product http //www.ncepower.com NCE3008M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S Schematic diagram General Feature

 9.32. Size:651K  ncepower
 nce30nd35q.pdf 

http //www.ncepower.com NCE30ND35Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND35Q uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =35A Schematic Diagram DS D R

 9.33. Size:368K  ncepower
 nce30nd07as.pdf 

NCE30ND07AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =7A RDS(ON)

 9.34. Size:710K  ncepower
 nce30p12bs.pdf 

http //www.ncepower.com NCE30P12BS NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12BS uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features V = -30V,I = -12A Schematic diagram DS D R

 9.35. Size:394K  ncepower
 nce3007s.pdf 

Pb Free Product http //www.ncepower.com NCE3007S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features VDS =-30V,ID =-6.5A RDS(ON)

 9.36. Size:643K  ncepower
 nce30h33ll.pdf 

http //www.ncepower.com NCE30H33LL NCE N-Channel Enhancement Mode Power MOSFET General Features Description V =30V ,I =330A DS D The NCE30H33LL uses advanced trench technology and R

 9.37. Size:674K  ncepower
 nce3085k.pdf 

Pb Free Product http //www.ncepower.com NCE3085K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3085K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =85A DS D R =4.2 m @ V =10V (Typ) Schematic diagram DS(ON) GS R =7.0m @ V =4.5V (Typ)

 9.38. Size:335K  ncepower
 nce30p30l.pdf 

 9.39. Size:391K  ncepower
 nce30h11bk.pdf 

NCE30H11BK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic diagram RDS(ON) =2.6m (typical) @ VGS=10V RDS(ON) =4.5m (typical) @ VGS=4

 9.40. Size:343K  ncepower
 nce30pd08s.pdf 

NCE30PD08S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30PD08S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. Schematic diagram General Features VDS = -30V,ID = -8A RDS(ON)

 9.41. Size:735K  ncepower
 nce30p25bq.pdf 

http //www.ncepower.com NCE30P25BQ NCE P-Channel Enhancement Mode Power MOSFET General Features V = -30V,I = -25A DS D Description R

 9.42. Size:742K  ncepower
 nce30td60bp nce30td60bt.pdf 

PbFreeProduct NCE30TD60BP,NCE30TD60BT 600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H

 9.43. Size:1232K  ncepower
 nce30td60b.pdf 

Pb Free Product NCE30TD60B 600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

 9.44. Size:357K  ncepower
 nce3011e.pdf 

Pb Free Product http //www.ncepower.com NCE3011E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. Schematic diagram General Features

 9.45. Size:367K  ncepower
 nce3095g.pdf 

http //www.ncepower.com NCE3095G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3095G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =95A used in a wide variety of applications. RDS(ON)=4.1m (typical) @ VGS=10V RDS(ON)=5.1m (typical) @ VGS=4.5V Application DC/DC

 9.46. Size:333K  ncepower
 nce3008n.pdf 

http //www.ncepower.com NCE3008N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008N uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

 9.47. Size:308K  ncepower
 nce3008y.pdf 

http //www.ncepower.com NCE3008Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

 9.48. Size:292K  ncepower
 nce30nd07bs.pdf 

NCE30ND07BS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07BS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =6.5A RDS(ON)

 9.49. Size:1027K  ncepower
 nce30td60bt.pdf 

 9.50. Size:296K  ncepower
 nce3080ia.pdf 

 9.51. Size:1163K  ncepower
 nce30td65bd.pdf 

 9.52. Size:681K  ncepower
 nce30h10bk.pdf 

http //www.ncepower.com NCE30H10BK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10BK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =100A DS D R

 9.53. Size:398K  ncepower
 nce3010s.pdf 

Pb Free Product http //www.ncepower.com NCE3010S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =10A RDS(ON)

 9.54. Size:384K  ncepower
 nce30nd09s.pdf 

Pb Free Product http //www.ncepower.com NCE30ND09S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =9A RDS(ON)

 9.55. Size:355K  ncepower
 nce3020q.pdf 

http //www.ncepower.com NCE3020Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3020Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =20A RDS(ON)

 9.56. Size:664K  ncepower
 nce3065g.pdf 

http //www.ncepower.com NCE3065G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =65A DS(ON) DS D used in a wide variety of applications. R =5.7m (typical) @ V =10V DS(ON) GS R =7.7m (typical) @ V =4.5V Application DS(ON) GS DC/

 9.57. Size:723K  ncepower
 nce30h15b.pdf 

Pb Free Product http //www.ncepower.com NCE30H15B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15B uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =150A DS D R

 9.58. Size:721K  ncepower
 nce30h12ak.pdf 

http //www.ncepower.com NCE30H12AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =120A DS D R

 9.59. Size:682K  ncepower
 nce30p25q.pdf 

http //www.ncepower.com NCE30P25Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -25A RDS(ON)

 9.60. Size:928K  ncepower
 nce30np1812g.pdf 

http //www.ncepower.com NCE30NP1812G NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812G uses advanced trench technology to provide excellent R and low gate charge.This device is DS(ON) suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram V = 30V,I = 18A V = -30V,I =- 12A DS D DS D R

 9.61. Size:364K  ncepower
 nce30p12s.pdf 

Pb Free Product http //www.ncepower.com NCE30P12S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1

 9.62. Size:327K  ncepower
 nce3035q.pdf 

Pb Free Product http //www.ncepower.com NCE3035Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)

 9.63. Size:373K  ncepower
 nce30h10.pdf 

Pb Free Product http //www.ncepower.com NCE30H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 9.64. Size:301K  ncepower
 nce3025g.pdf 

http //www.ncepower.com NCE3025G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3025G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

 9.65. Size:1194K  ncepower
 nce30td60bf.pdf 

 9.66. Size:495K  ncepower
 nce3080ka.pdf 

 9.67. Size:749K  ncepower
 nce30p85k.pdf 

http //www.ncepower.com NCE30P85K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P85K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V = -30V,I = -85A Schematic diagram DS D R =5.3m @ V = -10V (Typ) DS(ON) GS R =7.6m @ V = -4.5V (

 9.68. Size:311K  ncepower
 nce3050i.pdf 

Pb Free Product http //www.ncepower.com NCE3050I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

 9.69. Size:625K  ncepower
 nce30p60g.pdf 

http //www.ncepower.com NCE30P60G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P60G uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =-30V,I =-60A DS D R

 9.70. Size:632K  ncepower
 nce30h11bg.pdf 

http //www.ncepower.com NCE30H11BG NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BG uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =30V,I =110A DS D R =2.3m (typical) @ V =10V DS(ON) GS R =3.8m (typical) @ V =4.5V DS(ON) GS Excellen

 9.71. Size:264K  ncepower
 nce30p06j.pdf 

Pb Free Product http //www.ncepower.com NCE30P06J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE30P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diag

 9.72. Size:296K  ncepower
 nce3015s.pdf 

http //www.ncepower.com NCE3015S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =15A Schematic diagram RDS(ON)

 9.73. Size:247K  ncepower
 nce3055.pdf 

Pb Free Product http //www.ncepower.com NCE3055 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3055 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other switching application. S General Feature VDS =60V,ID =3.0

 9.74. Size:314K  ncepower
 nce30p55l.pdf 

NCE30P55L http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P55L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-55A Schematic diagram RDS(ON)

 9.75. Size:395K  ncepower
 nce30h10k.pdf 

Pb Free Product http //www.ncepower.com NCE30H10K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 9.76. Size:421K  ncepower
 nce30p30k.pdf 

Pb Free Product http //www.ncepower.com NCE30P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-30A RDS(ON)

 9.77. Size:320K  ncepower
 nce3009s.pdf 

NCE3009S http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3009S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =9A Schematic diagram RDS(ON)

 9.78. Size:631K  ncepower
 nce3008xm.pdf 

http //www.ncepower.com NCE3008XM NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008XM uses advanced trench technology to provide D excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S General Features V = 30V,I = 8A Schematic diagram

 9.79. Size:693K  ncepower
 nce30h15bk.pdf 

Pb Free Product http //www.ncepower.com NCE30H15BK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15BK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =150A DS D R

 9.80. Size:277K  ncepower
 nce30p10s.pdf 

http //www.ncepower.com NCE30P10S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P10S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -10A RDS(ON)

 9.81. Size:358K  ncepower
 nce30p30g.pdf 

Pb Free Product http //www.ncepower.com NCE30P30G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -30A RDS(ON)

 9.82. Size:418K  ncepower
 nce30h12k.pdf 

Pb Free Product http //www.ncepower.com NCE30H12K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

 9.83. Size:342K  ncepower
 nce30p15as.pdf 

 9.84. Size:694K  ncepower
 nce30h28.pdf 

http //www.ncepower.com NCE30H28 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H28 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V ,I =280A Schematic diagram DS D R

 9.85. Size:723K  ncepower
 nce3065q.pdf 

http //www.ncepower.com NCE3065Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065Q uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =65A DS(ON) DS D used in a wide variety of applications. R =4.2m (typical) @ V =10V DS(ON) GS R =6.7m (typical) @ V =4.5V Application DS(ON) GS DC/

 9.86. Size:637K  ncepower
 nce30h10bg.pdf 

http //www.ncepower.com NCE30H10BG NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE30H10BG uses advanced trench technology and V =30V,I =100A DS D design to provide excellent R with low gate charge. It can R

 9.87. Size:371K  ncepower
 nce30h11g.pdf 

Pb Free Product http //www.ncepower.com NCE30H11G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON)

 9.88. Size:397K  ncepower
 nce3030k.pdf 

Pb Free Product http //www.ncepower.com NCE3030K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)

 9.89. Size:633K  ncepower
 nce3040q.pdf 

http //www.ncepower.com NCE3040Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3040Q uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =40A DS(ON) DS D used in a wide variety of applications. R =5.7m (typical) @ V =10V DS(ON) GS R =10.0m (typical) @ V =4.5V Application DS(ON) GS DC

 9.90. Size:437K  ncepower
 nce30np1812q.pdf 

http //www.ncepower.com NCE30NP1812Q NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram VDS = 30V,ID = 18A VDS = -30V,ID =- 12A

 9.91. Size:413K  ncepower
 nce30np4030g.pdf 

http //www.ncepower.com NCE30NP4030G NCE N&P-Channel complementary Power MOSFET Description The NCE30NP4030G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel VDS = 30V,ID = 40A VDS = -30V,ID =- 30A Schematic diagram RDS(ON)

 9.92. Size:1030K  ncepower
 nce30td65bt.pdf 

 9.93. Size:701K  ncepower
 nce30td60b nce30td60bf.pdf 

PbFreeProduct NCE30TD60B,NCE30TD60BF 600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat Hi

 9.94. Size:429K  ncepower
 nce3065k.pdf 

http //www.ncepower.com NCE3065K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =65A RDS(ON)

 9.95. Size:345K  ncepower
 nce30p20q.pdf 

http //www.ncepower.com NCE30P20Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -20A RDS(ON)

 9.96. Size:833K  ncepower
 nce3068q.pdf 

http //www.ncepower.com NCE3068Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3068Q uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =68A DS(ON) DS D used in a wide variety of applications. R =3.5m (max) @ V =10V DS(ON) GS R =6.2m (max) @ V =4.5V Application DS(ON) GS DC/DC Conve

 9.97. Size:1031K  ncepower
 nce30td65bp.pdf 

 9.98. Size:301K  ncepower
 nce30p16q.pdf 

Pb Free Product http //www.ncepower.com NCE30P16Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P16Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -16A RDS(ON)

 9.99. Size:523K  ncepower
 nce30h10ak.pdf 

http //www.ncepower.com NCE30H10AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 9.100. Size:384K  ncepower
 nce30h11k.pdf 

http //www.ncepower.com NCE30H11K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A RDS(ON)

 9.101. Size:398K  ncepower
 nce30h15.pdf 

Pb Free Product http //www.ncepower.com NCE30H15 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

 9.102. Size:655K  ncepower
 nce3045g.pdf 

http //www.ncepower.com NCE3045G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3045G uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =45A DS(ON) DS D used in a wide variety of applications. R =6.9m (typical) @ V =10V DS(ON) GS R =11.6m (typical) @ V =4.5V Application DS(ON) GS DC

 9.103. Size:399K  ncepower
 nce3050k.pdf 

Pb Free Product http //www.ncepower.com NCE3050K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

 9.104. Size:667K  ncepower
 nce30th60bp.pdf 

PbFreeProduct NCE30TH60BP 600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed sw

 9.105. Size:1124K  cn vbsemi
 nce3035g.pdf 

NCE3035G www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 60 30 31 nC 0.009 at VGS = 4.5 V 48 APPLICATIONS OR-ing DFN5X6 Single D D Server D 8 DC/DC D 7 D 6 5 G 1 2 S S 3 S N

 9.106. Size:803K  cn vbsemi
 nce3007s.pdf 

NCE3007S www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top

 9.107. Size:994K  cn vbsemi
 nce3010s.pdf 

NCE3010S www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S

 9.108. Size:816K  cn vbsemi
 nce30h10.pdf 

NCE30H10 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0035 at VGS = 10 V 98 30 82 nC 0.0045 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220AB D Server DC/DC G S G D S N-Channel MOSFET Top View ABS

 9.109. Size:840K  cn vbsemi
 nce3080ka.pdf 

NCE3080KA www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABS

 9.110. Size:953K  cn vbsemi
 nce30h12k.pdf 

NCE30H12K www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0023 at VGS = 10 V 120 30 82 nC 0.0032 at VGS = 4.5 V 100 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET