NCE30H11K - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCE30H11K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 429 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
Тип корпуса: TO252
Аналог (замена) для NCE30H11K
NCE30H11K Datasheet (PDF)
nce30h11k.pdf
http://www.ncepower.com NCE30H11KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A RDS(ON)
nce30h11bk.pdf
NCE30H11BKhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic diagram RDS(ON) =2.6m (typical) @ VGS=10V RDS(ON) =4.5m (typical) @ VGS=4
nce30h11bg.pdf
http://www.ncepower.com NCE30H11BGNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H11BG uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =30V,I =110ADS DR =2.3m (typical) @ V =10VDS(ON) GSR =3.8m (typical) @ V =4.5VDS(ON) GS Excellen
nce30h11g.pdf
Pb Free Producthttp://www.ncepower.com NCE30H11GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON)
Другие MOSFET... NCE3090K , NCE3095G , NCE3095K , NCE30D0808J , NCE30D2519K , NCE30H10AK , NCE30H10K , NCE30H11BK , IRF1405 , NCE30H12 , NCE30H14K , NCE30H15 , NCE30H15K , NCE30H29D , NCE30ND07AS , NCE30ND07S , NCE30ND09S .
History: STB18N60M2
History: STB18N60M2
Список транзисторов
Обновления
MOSFET: AGM60P20R | AGM60P20D | AGM60P20AP | AGM60P14D | AGM60P14AP | AGM60P14A | AGM60P100A | AGM60P06S | AGM609S | AGM609MNA | AGM609F | AGM609D | AGM609C | AGM609AP | AGM40P26S | AGM40P26E
Popular searches
irfp450 equivalent | 2sb649 | 2sb324 transistor | b754 transistor | 2sc828 equivalent | 4843ns | 2sc1318 datasheet | 2sc3281 datasheet





