Справочник MOSFET. NCE30H11K

 

NCE30H11K Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE30H11K
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 429 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для NCE30H11K

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE30H11K Datasheet (PDF)

 ..1. Size:384K  ncepower
nce30h11k.pdfpdf_icon

NCE30H11K

http://www.ncepower.com NCE30H11KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A RDS(ON)

 6.1. Size:391K  ncepower
nce30h11bk.pdfpdf_icon

NCE30H11K

NCE30H11BKhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic diagram RDS(ON) =2.6m (typical) @ VGS=10V RDS(ON) =4.5m (typical) @ VGS=4

 6.2. Size:632K  ncepower
nce30h11bg.pdfpdf_icon

NCE30H11K

http://www.ncepower.com NCE30H11BGNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H11BG uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =30V,I =110ADS DR =2.3m (typical) @ V =10VDS(ON) GSR =3.8m (typical) @ V =4.5VDS(ON) GS Excellen

 6.3. Size:371K  ncepower
nce30h11g.pdfpdf_icon

NCE30H11K

Pb Free Producthttp://www.ncepower.com NCE30H11GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON)

Другие MOSFET... NCE3090K , NCE3095G , NCE3095K , NCE30D0808J , NCE30D2519K , NCE30H10AK , NCE30H10K , NCE30H11BK , NCEP15T14 , NCE30H12 , NCE30H14K , NCE30H15 , NCE30H15K , NCE30H29D , NCE30ND07AS , NCE30ND07S , NCE30ND09S .

History: STH8NA60FI | MTE65N20H8 | WMO3N120D1 | IRLZ44S | TK8R2E06PL | IRF7455 | WMS08P04TS

 

 
Back to Top

 


 
.