NCE30H12 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCE30H12
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 1350 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
Тип корпуса: TO220
- подбор MOSFET транзистора по параметрам
NCE30H12 Datasheet (PDF)
nce30h12.pdf

Pb Free Producthttp://www.ncepower.com NCE30H12NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)
nce30h12ak.pdf

http://www.ncepower.comNCE30H12AKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H12AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =120ADS DR
nce30h12k.pdf

Pb Free Producthttp://www.ncepower.com NCE30H12KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)
nce30h12k.pdf

NCE30H12Kwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0023 at VGS = 10 V 12030 82 nC0.0032 at VGS = 4.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFET
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: PHD97NQ03LT | SI7913DN | SWD6N65K | MC11N005 | NVMFS5C628N | JCS5N50CT | NCEP026N10F
History: PHD97NQ03LT | SI7913DN | SWD6N65K | MC11N005 | NVMFS5C628N | JCS5N50CT | NCEP026N10F



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