NCE40P70K - описание и поиск аналогов

 

NCE40P70K - Аналоги. Основные параметры


   Наименование производителя: NCE40P70K
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 570 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: TO252

 Аналог (замена) для NCE40P70K

 

NCE40P70K технические параметры

 ..1. Size:397K  ncepower
nce40p70k.pdfpdf_icon

NCE40P70K

Pb Free Product http //www.ncepower.com NCE40P70K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P70K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)

 8.1. Size:294K  ncepower
nce40p40d.pdfpdf_icon

NCE40P70K

Pb Free Product http //www.ncepower.com NCE40P40D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A RDS(ON)

 8.2. Size:470K  ncepower
nce40p40k.pdfpdf_icon

NCE40P70K

Pb Free Product http //www.ncepower.com NCE40P40K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A Schematic diagram RDS(ON)

 8.3. Size:293K  ncepower
nce40p05y.pdfpdf_icon

NCE40P70K

Pb Free Product http //www.ncepower.com NCE40P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDS =-40V,ID =-5.3A S RDS(ON)

Другие MOSFET... NCE40H29D , NCE40ND0812S , NCE40P05S , NCE40P07S , NCE40P13S , NCE40P15K , NCE40P40K , NCE40P40L , STP75NF75 , NCE4435 , NCE4606A , NCE4614 , NCE4801 , NCE4963 , NCE55H12 , NCE55P15I , NCE55P15K .

 

 
Back to Top

 


 
.