Pb Free Producthttp://www.ncepower.com NCE6075KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6075K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE6075NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

PbFreeProductNCE60TD65BT650V, 60A, Trench FS II Fast IGBTGeneral Description:Using NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

http://www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS Dor power management. R

NCE60NF730IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust

Pb Free Producthttp://www.ncepower.com NCE6030KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =30A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE603SN and P-Channel Enhancement Mode Power MOSFET Description The NCE603S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS = 6

NCE60N390FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria

Pb Free Producthttp://www.ncepower.com NCE6020AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

NCE60NF200IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

NCE60N640FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

NCE60NP4035Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP4035K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =40ADS DR

Pb Free Producthttp://www.ncepower.com NCE6008ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6008AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =8A Schematic diagram RDS(ON)

NCE60P02Yhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P02Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-2A RDS(ON)

NCE60NP2012Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP2012K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesN channelSchematic diagram V =60V,I =20ADS DR

NCE60N700DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

NCE6080EKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080EK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR

http://www.ncepower.com NCE60P05NNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-5A RDS(ON)

NCE60NF040TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 35 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 61 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 87 nCSMPS requirements for PFC,

NCE60P45AKhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P45AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-45A RDS(ON)

NCE60NP1515Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP1515K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =15ADS DR

NCE60N390IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria

Pb Free Producthttp://www.ncepower.com NCE6003MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SGeneral Feature Schematic diagram

http://www.ncepower.com NCE60P06SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-6A RDS(ON)

NCE60NF260DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 14 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indus

NCE60NF080FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

NCE60N670FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 620 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.4 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

NCE60P45Khttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P45K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-45A RDS(ON)

NCE60P40Fhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P40F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-40A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE6020AINCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A Schematic diagram RDS(ON)

NCE60P82ADhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P82AD uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-60V,I =-82ADS DR

Pb Free ProductNCE60TD60BP600V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

NCE60P09Shttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE6003NCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE6003 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic Diagram General Features

NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

NCE60N640KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

Pb Free Producthttp://www.ncepower.com NCE6012CSNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6012CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =12A Schematic diagram RDS(ON)

http://www.ncepower.com NCE6080DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A Schematic diagram RDS(ON)

http://www.ncepower.comNCE60P50GNCE P-Channel Enhancement Mode Power MOSFETDescriptionGeneral FeaturesThe NCE60P50G uses advanced trench technology and V =-60V,I =-50ADS Ddesign to provide excellent R with low gate charge .ThisDS(ON)R =23m (typical) @ V =-10VDS(ON) GSdevice is well suited for high current load applications. High density cell design for ultra lo

NCE60N1K0DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

http://www.ncepower.comNCE6045XGNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6045XG uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =60V,I =45ADS(ON) DS Dbe used in a wide variety of applications. R =7.4m (typical) @ V =10VDS(ON) GSR =11.4m (typical) @ V =4.5VApplication DS(ON) GS

NCE60NF160VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 145 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 21 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industri

NCE60NF200KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

http://www.ncepower.comNCE60H10KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10K uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.General Features V =60V,I =100A Schematic diagramDS DR

NCE60N390KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria

Pb Free ProductNCE6080Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)

NCE60NF730KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust

Pb Free ProductNCE60TD60BT600V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

http://www.ncepower.comNCE60ND03NNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03N uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

http://www.ncepower.com NCE60H30TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H30T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =300ADS DR

NCE60NF200FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

http://www.ncepower.comNCE6004NCE N-Channel Enhancement Mode Power MOSFETDDescriptionGThe NCE6004 uses advanced trench technology to provideexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =4ADS DR

NCE60N1K0RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

http://www.ncepower.comNCE6058KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =58ADS DR

NCE6065AGhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6065AG uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =65ADS DR

NCE60NF160KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 145 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 21 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industri

Pb Free Producthttp://www.ncepower.comNCE6020ALNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020AL uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

http://www.ncepower.com NCE60P20KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-20A RDS(ON)

NCE60N700FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

NCE60P05BYhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05BY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-5A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE60P18AKNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P18AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-18A RDS(ON)

NCE60P70Dhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P70D uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =-60V,I =-70ADS DR

NCE60NF730RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust

NCE60NF080N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industrial

NCE60P18AQhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = -60V,I = -18ADS DThe NCE60P18AQ uses advanced trench technology to provideR

NCE6065Ghttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6065G uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =65ADS DR

http://www.ncepower.com NCE60P08ASNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P08AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-8A RDS(ON)

NCE60N640IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

NCE60NP09Shttp://www.ncepower.comNCE 60V Complementary MOSFETDescriptionThe NCE60NP09S uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =9ADS DR

NCE60NF730DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust

Pb Free Producthttp://www.ncepower.com NCE6050KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE6058NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6058 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =58A RDS(ON)

http://www.ncepower.com NCE60H15ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE609N and P-Channel Enhancement Mode Power MOSFET Description The NCE609 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =40V,ID

NCE60N390N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industrial

NCE60NF200DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

http://www.ncepower.com NCE60P03RNCE P-Channel Enhancement Mode Power MOSFETDescriptionGeneral FeaturesThe NCE60P03R uses advanced trench technology and design V =-60V,I =-3ADS Dto provide excellent R with low gate charge .This device isDS(ON)R

NCE60P28AKhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P28AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-28A RDS(ON)

Pb Free Producthttp://www.ncepower.comNCE60ND18GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND18G uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =18ADS DSchematic diagramR

Pb Free Producthttp://www.ncepower.com NCE60P10KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-10A RDS(ON)

http://www.ncepower.comNCE60P65KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P65K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-60V,I =-65ADS DR

Pb Free Producthttp://www.ncepower.comNCE6020ANCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

PbFreeProduct NCE60TD60BP,NCE60TD60BT 600V, 60A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

NCE60P16AKhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-16A RDS(ON)

NCE6020AQhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescription General Featureshe NCE6020AQ uses advanced trench technology and design to V = 60V,I = 20ADS Dprovide excellent R with low gate charge. It can be used in a R

NCE60NF080TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

Pb Free Producthttp://www.ncepower.com NCE6005ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS=60V,ID=5A RDS(ON)

NCE60NF260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 14 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indus

NCE60NF200N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and industr

Pb Free Producthttp://www.ncepower.com NCE6012ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6012AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =12A RDS(ON)

http://www.ncepower.com NCE60H15ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

http://www.ncepower.comNCE60H10NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10 uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =60V,I =100ADS DR

NCE60NF260IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 14 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indus

NCE60N2K1FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P

NCE60NF420DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 380 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.7 nCpower conversion, and ind

NCE60ND45AGhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND45AG uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =60V,I =45ADS(ON) DS Dbe used in a wide variety of applications. R =9.4m (typical) @ V =10VDS(ON) GSR =13.4m (typical) @ V =4.5VApplication DS(ON) GS

Pb Free Producthttp://www.ncepower.com NCE6050ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

NCE60NF031TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSmin@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 23 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 81 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 135 nCSMPS requirements for P

NCE60ND45XGhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = 60V,I =45ADS DThe NCE60ND45XG uses advanced trench technology andR

NCE60NF260KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 14 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indus

NCE60N700RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

Pb Free Producthttp://www.ncepower.com NCE60P25NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

http://www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS DR

http://www.ncepower.com NCE6080NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80A Schematic diagramDS DR

NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

NCE60P04SN http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04SN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-4A RDS(ON)

http://www.ncepower.comNCE60H10DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10D uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.Schematic diagramGeneral Features V =60V,I =100ADS DR

NCE60P09AShttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE6007SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =7A Schematic diagram RDS(ON)

http://www.ncepower.com NCE60P55KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-55A RDS(ON)

NCE60NF260N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 14 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indust

NCE6005ANhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6005AN uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =5ADS DR

Pb Free ProductNCE60TD65BT650V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

NCE60N370KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 335 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria

Pb Free ProductNCE6080AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =6m (typical) @ V =10V Schematic diagramDS(ON) GSR =7m (typical) @ V =

http://www.ncepower.com NCE60P05RNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-5A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.comNCE60NP2016GNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP2016G uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =20ADS DR

Pb Free Producthttp://www.ncepower.com NCE6045GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6045G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =45A RDS(ON)

Pb Free ProductNCE60TD65BT4650V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

NCE60ND45Ghttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45G uses advanced trench technology and General Features design to provide excellent RDS(ON) with low gate charge. It VDS = 60V,ID =45A can be used in a wide variety of applications. RDS(ON)

NCE60NF420KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 380 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.7 nCpower conversion, and ind

NCE60NF019TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 17 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 107 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 184 nCSMPS requirements for PF

NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

Pb Free Producthttp://www.ncepower.com NCE60P12KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-12A RDS(ON)

http://www.ncepower.comNCE6080EDNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080ED uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80A Schematic diagramDS DR

NCE60N700IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

NCE60NF110N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 95 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 29 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, AC/

NCE60R360D,NCE60R360,NCE60R360FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industrys ID 11 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

http://www.ncepower.comNCE6003XMNCE N-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE6003XM uses advanced trench technology to provideexcellent R , low gate charge. This device is suitable forDS(ON)Guse as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =60V,I =3ADS DR

NCE60N1K0IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

NCE60NF420IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 380 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.7 nCpower conversion, and ind

NCE60N2K1RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P

Pb Free ProductNCE6080Ahttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)=6.5m (typical) @ VGS=10V Schematic diagram RDS(ON)=7.5m (typica

Pb Free ProductNCE6080AThttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10VDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G

NCE60N2K1DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P

NCE60N2K1KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P

NCE60N390DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria

NCE60NF110FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 95 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 29 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, AC

NCE60NF200TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

http://www.ncepower.com NCE60H15ATNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

NCE60N1K0KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

http://www.ncepower.comNCE60P70GNCE P-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE60P70G uses advanced trench technology and V =-60V,I =-70ADS Ddesign to provide excellent R with low gate charge .This R =11m (typical) @ V =-10VDS(ON) DS(ON) GSdevice is well suited for high current load applications. R =13m (typical) @ V =-4.5VDS(ON) GS

NCE60P12AShttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-12A RDS(ON)

NCE60P14Khttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P14K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for use as a load switch or in PWMapplications.General FeaturesSchematic diagram V =-60V,I =-14ADS DR

NCE60NF420FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 380 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.7 nCpower conversion, and ind

NCE60NF420N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 380 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.7 nCpower conversion, and indu

Pb Free Producthttp://www.ncepower.com NCE6005ARNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=60V,ID=5A RDS(ON)

NCE60P07AShttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-7A Schematic diagram RDS(ON)

http://www.ncepower.com NCE60P09KNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V =-60V,I =-9ADS DThe NCE60P09K uses advanced trench technology and designR

http://www.ncepower.comNCE6009XSNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6009XS uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 60V,I =9ADS DSchematic diagramR

NCE60N2K1IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P

NCE60N640DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

http://www.ncepower.comNCE6003XYNCE N-Channel Enhancement Mode Power MOSFETDDescriptionGThe NCE6003XY uses advanced trench technology to provideexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =3ADS DR

Pb Free Producthttp://www.ncepower.com NCE60P50NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

NCE6042AGhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6042AG uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =42A Schematic diagramDS DR

http://www.ncepower.com NCE6080AINCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AI uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10V Schematic diagramDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G

NCE60N700KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

NCE60NF055N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industrial

NCE60NF080DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

Pb Free Producthttp://www.ncepower.com NCE60H10FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

NCE603583http://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE603583 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General FeaturesN channelSchematic diagram V =60V,I =40ADS DR

PbFreeProduct NCE60TD120UT 1200V, 60A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

NCE60NF055TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria

Pb Free Producthttp://www.ncepower.com NCE6009ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6009AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)

http://www.ncepower.comNCE60H18NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H18 uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =60V,I =180ADS DR

NCE60P82AFhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral Features V =-60V,I =-41ADescription DS DThe NCE60P82AF uses advanced trench technology and design R

NCE60NF055DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria

http://www.ncepower.comNCE60ND03SNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03S uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

NCE6025Qhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6025Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =25ADS DR

Pb Free Producthttp://www.ncepower.com NCE6050IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE6003YNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE6003Y uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic Diagram General Features

NCE60P14AKhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P14AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-14A RDS(ON)

NCE6045XAGhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = 60V,I =45ADS DThe NCE6045XAG uses advanced trench technology andR

http://www.ncepower.com NCE60H15TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

NCE60N1K0FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 880 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.5 nCpower conversion, and indu

http://www.ncepower.comNCE6003XNCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE6003X uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =3ADS DR

Pb Free Producthttp://www.ncepower.com NCE6010JNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6010J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =10A RDS(ON)

http://www.ncepower.com NCE60H28LLNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE60H28LL uses advanced trench technology and V =60V ,I =280ADS Ddesign to provide excellent R with low gate charge. It R

Pb Free Producthttp://www.ncepower.com NCE60P25KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

NCE60P82Ahttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P82A uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-60V,I =-82ADS DR

NCE60PD05Shttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description D1D2The NCE60PD05S uses advanced trench technology and G1 G2design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S1 S2Schematic diagram General Features VDS =-60V,ID =-5A RDS(ON)

NCE60N640N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indust

NCE60NF055FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria

Pb Free Producthttp://www.ncepower.com NCE60P50KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

NCE60ND09AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)

NCE60NF730FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust

Pb Free Producthttp://www.ncepower.com NCE60P04YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-4A RDS(ON)

NCE60P03YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P03Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-3A RDS(ON)

NCE60NF160TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 145 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 21 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industri

Pb Free Producthttp://www.ncepower.comNCE60ND20AKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND20AK uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

http://www.ncepower.comNCE6058AKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6058AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =58ADS DR

NCE60P17AQhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = -60V,I = -17ADS DThe NCE60P17AQ uses advanced trench technology to provideR

NCE60N670KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 620 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.4 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

Pb Free Producthttp://www.ncepower.com NCE60P04RNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-4.3A Schematic diagram RDS(ON)

NCE60P82AKhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P82AK uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-60V,I =-82ADS DR

Pb Free ProductNCE60TD65BP650V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

NCE603Swww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VGS =

NCE6005ASwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe

NCE60P25Kwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bri