NCE6080K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE6080K
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 110 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 90 nC
Время нарастания (tr): 7 ns
Выходная емкость (Cd): 290 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0085 Ohm
Тип корпуса: TO252
NCE6080K Datasheet (PDF)
nce6080k.pdf
Pb Free ProductNCE6080Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)
nce6080ek.pdf
NCE6080EKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080EK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR
nce6080d.pdf
http://www.ncepower.com NCE6080DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A Schematic diagram RDS(ON)
nce6080.pdf
http://www.ncepower.com NCE6080NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80A Schematic diagramDS DR
nce6080ak.pdf
Pb Free ProductNCE6080AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =6m (typical) @ V =10V Schematic diagramDS(ON) GSR =7m (typical) @ V =
nce6080ed.pdf
http://www.ncepower.comNCE6080EDNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080ED uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80A Schematic diagramDS DR
nce6080a.pdf
Pb Free ProductNCE6080Ahttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)=6.5m (typical) @ VGS=10V Schematic diagram RDS(ON)=7.5m (typica
nce6080at.pdf
Pb Free ProductNCE6080AThttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10VDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G
nce6080ai.pdf
http://www.ncepower.com NCE6080AINCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AI uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10V Schematic diagramDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SFD070N60C2
