NCE65T260I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE65T260I
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 131 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 24.7 nC
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 74 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.26 Ohm
Тип корпуса: TO251
Аналог (замена) для NCE65T260I
NCE65T260I Datasheet (PDF)
nce65t260i nce65t260k.pdf
NCE65T260I,NCE65T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce65t260d nce65t260 nce65t260f.pdf
NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t260f nce65t260 nce65t260d.pdf
NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t2k4k.pdf
NCE65T2K4INCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t2k4i nce65t2k4k.pdf
NCE65T2K4INCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SSM03N70GJ
