NCE65T540F Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCE65T540F
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 31.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Qg ⓘ - Общий заряд затвора: 14.6 nC
tr ⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 37 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.54 Ohm
Тип корпуса: TO220F
Аналог (замена) для NCE65T540F
NCE65T540F Datasheet (PDF)
nce65t540f nce65t540 nce65t540d.pdf

NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t540d nce65t540 nce65t540f.pdf

NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t540f.pdf

NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t540i nce65t540k.pdf

NCE65T540INCE65T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
Другие MOSFET... NCE65T2K4K , NCE65T360D , NCE65T360 , NCE65T360F , NCE65T360K , NCE65T360I , NCE65T540D , NCE65T540 , IRFZ44N , NCE65T540I , NCE65T540K , NCE65T680D , NCE65T680 , NCE65T680F , NCE65T680I , NCE65T680K , NCE65T900D .
History: APTC80H29SCTG | AM1421P
History: APTC80H29SCTG | AM1421P



Список транзисторов
Обновления
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
c2383 | 2sb681 | bc639 equivalent | bd138 transistor equivalent | c1096 transistor | c1345 transistor | jcs640c | kn2907a