Справочник MOSFET. NCE65T540F

 

NCE65T540F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE65T540F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 14.6 nC
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 37 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.54 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для NCE65T540F

 

 

NCE65T540F Datasheet (PDF)

 ..1. Size:604K  ncepower
 nce65t540f nce65t540 nce65t540d.pdf

NCE65T540F NCE65T540F

NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:604K  ncepower
 nce65t540d nce65t540 nce65t540f.pdf

NCE65T540F NCE65T540F

NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..3. Size:604K  ncepower
 nce65t540f.pdf

NCE65T540F NCE65T540F

NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:489K  ncepower
 nce65t540i nce65t540k.pdf

NCE65T540F NCE65T540F

NCE65T540INCE65T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.2. Size:604K  ncepower
 nce65t540.pdf

NCE65T540F NCE65T540F

NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.3. Size:1427K  ncepower
 nce65t540i.pdf

NCE65T540F NCE65T540F

NCE65T540INCE65T540KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial powe

 5.4. Size:604K  ncepower
 nce65t540d.pdf

NCE65T540F NCE65T540F

NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.5. Size:1427K  ncepower
 nce65t540k.pdf

NCE65T540F NCE65T540F

NCE65T540INCE65T540KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial powe

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