NCE65T900. Аналоги и основные параметры

Наименование производителя: NCE65T900

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 46 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3 ns

Cossⓘ - Выходная емкость: 25 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm

Тип корпуса: TO220

Аналог (замена) для NCE65T900

- подборⓘ MOSFET транзистора по параметрам

 

NCE65T900 даташит

 ..1. Size:606K  ncepower
 nce65t900 nce65t900f.pdf pdf_icon

NCE65T900

NCE65T900D NCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 750 m with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:606K  ncepower
 nce65t900d nce65t900 nce65t900f.pdf pdf_icon

NCE65T900

NCE65T900D NCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 750 m with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..3. Size:606K  ncepower
 nce65t900.pdf pdf_icon

NCE65T900

NCE65T900D NCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 750 m with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 0.1. Size:1403K  ncepower
 nce65t900k.pdf pdf_icon

NCE65T900

NCE65T900I NCE65T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 750 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial pow

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Другие IGBT... NCE65T540I, NCE65T540K, NCE65T680D, NCE65T680, NCE65T680F, NCE65T680I, NCE65T680K, NCE65T900D, IRFZ44, NCE65T900F, NCE65T900I, NCE65T900K, NCE65TF041T, NCE65TF068T, NCE65TF099D, NCE65TF099, NCE65TF099F