NCE65T900I - параметры транзистора MOSFET, его аналоги, datasheet

NCE65T900I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: NCE65T900I
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 46 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 25 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm
   Тип корпуса: TO251

Аналог (замена) для NCE65T900I

NCE65T900I Datasheet (PDF)

..1. Size:450K ncepower
nce65t900i nce65t900k.pdf

NCE65T900INCE65T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 750 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industr

..2. Size:1403K ncepower
nce65t900i.pdf

NCE65T900INCE65T900KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 750 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial pow

5.1. Size:1403K ncepower
nce65t900k.pdf

NCE65T900INCE65T900KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 750 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial pow

5.2. Size:606K ncepower
nce65t900 nce65t900f.pdf

NCE65T900DNCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) RDS(ON)TYP 750 m with low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

5.3. Size:606K ncepower
nce65t900d nce65t900 nce65t900f.pdf