NCE65TF360F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE65TF360F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 32.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 19 nC
trⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 54 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
Тип корпуса: TO220F
Аналог (замена) для NCE65TF360F
NCE65TF360F Datasheet (PDF)
nce65tf360f nce65tf360 nce65tf360d.pdf
NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
nce65tf360d nce65tf360 nce65tf360f.pdf
NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
nce65tf360f.pdf
NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
nce65tf360.pdf
NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
nce65tf360d.pdf
NCE65TF360D,NCE65TF360,NCE65TF360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
nce65tf130t.pdf
NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap
nce65tf180f.pdf
NCE65TF180D,NCE65TF180,NCE65TF180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON) typ.with low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and i
nce65tf180f nce65tf180 nce65tf180d.pdf
NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion,
nce65tf130d.pdf
NCE65TF130D,NCE65TF130,NCE65TF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and ind
nce65tf099.pdf
NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
nce65tf130.pdf
NCE65TF130D,NCE65TF130,NCE65TF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and ind
nce65tf130t.pdf
NCE65TF130TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial power applicati
nce65tf099d.pdf
NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
nce65tf180t.pdf
NCE65TF180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 160 m DS(ON) with low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl
nce65tf099d nce65tf099 nce65tf099f.pdf
NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a
nce65tf099f nce65tf099 nce65tf099d.pdf
NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
nce65tf130f.pdf
NCE65TF130D,NCE65TF130,NCE65TF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and ind
nce65tf180d.pdf
NCE65TF180D,NCE65TF180,NCE65TF180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON) typ.with low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and i
nce65tf130f nce65tf130 nce65tf130d.pdf
NCE65TF130D,NCE65TF130,NCE65TF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and ind
nce65tf130d nce65tf130 nce65tf130f.pdf
NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion,
nce65tf068t.pdf
NCE65TF068T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 62 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 53 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
nce65tf099t.pdf
NCE65TF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app
nce65tf180d nce65tf180 nce65tf180f.pdf
NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 160 m DS(ON) typ.with low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
nce65tf180.pdf
NCE65TF180D,NCE65TF180,NCE65TF180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON) typ.with low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and i
nce65tf099f.pdf
NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
nce65tf078t.pdf
NCE65TF078TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 62 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
nce65tf041t.pdf
NCE65TF041T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 36 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 75 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918