Справочник MOSFET. NCE6890K

 

NCE6890K Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE6890K
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 68 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 94 ns
   Cossⓘ - Выходная емкость: 450 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для NCE6890K

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE6890K Datasheet (PDF)

 ..1. Size:420K  ncepower
nce6890k.pdfpdf_icon

NCE6890K

http://www.ncepower.com NCE6890KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A Schematic diagram RDS(ON)

 7.1. Size:321K  ncepower
nce6890d.pdfpdf_icon

NCE6890K

Pb Free Producthttp://www.ncepower.com NCE6890DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

 7.2. Size:338K  ncepower
nce6890.pdfpdf_icon

NCE6890K

NCE6890http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

 9.1. Size:326K  ncepower
nce6802.pdfpdf_icon

NCE6890K

http://www.ncepower.com NCE6802NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = 30V,ID = 3.5A RDS(ON)

Другие MOSFET... NCE65TF180 , NCE65TF180F , NCE65TF180T , NCE65TF360D , NCE65TF360 , NCE65TF360F , NCE6802 , NCE6890 , 12N60 , NCE6990 , NCE6990D , NCE70T180D , NCE70T180 , NCE70T180F , NCE70T1K2K , NCE70T1K2I , NCE70T1K2R .

History: SML100C6 | HSP3105 | SFB083N80CC2 | HYG060N08NS1P | NVBLS1D1N08H | IRF7456PBF-1 | STF5N80K5

 

 
Back to Top

 


 
.