NCE70T180. Аналоги и основные параметры

Наименование производителя: NCE70T180

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 188 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.5 ns

Cossⓘ - Выходная емкость: 83 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm

Тип корпуса: TO220

Аналог (замена) для NCE70T180

- подборⓘ MOSFET транзистора по параметрам

 

NCE70T180 даташит

 ..1. Size:623K  ncepower
 nce70t180d nce70t180 nce70t180f.pdf pdf_icon

NCE70T180

NCE70T180D,NCE70T180,NCE70T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, an

 0.1. Size:623K  ncepower
 nce70t180f.pdf pdf_icon

NCE70T180

NCE70T180D,NCE70T180,NCE70T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, an

 7.1. Size:594K  ncepower
 nce70t1k2f.pdf pdf_icon

NCE70T180

NCE70T1K2,NCE70T1K2D,NCE70T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, an

 7.2. Size:476K  ncepower
 nce70t1k2i nce70t1k2k.pdf pdf_icon

NCE70T180

NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE65TF360, NCE65TF360F, NCE6802, NCE6890, NCE6890K, NCE6990, NCE6990D, NCE70T180D, IRLB4132, NCE70T180F, NCE70T1K2K, NCE70T1K2I, NCE70T1K2R, NCE70T260D, NCE70T260, NCE70T260F, NCE70T360D