NCE70T1K2R. Аналоги и основные параметры

Наименование производителя: NCE70T1K2R

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 5.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4 ns

Cossⓘ - Выходная емкость: 17 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.3 Ohm

Тип корпуса: SOT223

Аналог (замена) для NCE70T1K2R

- подборⓘ MOSFET транзистора по параметрам

 

NCE70T1K2R даташит

 ..1. Size:415K  ncepower
 nce70t1k2r.pdf pdf_icon

NCE70T1K2R

NCE70T1K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap

 5.1. Size:594K  ncepower
 nce70t1k2f.pdf pdf_icon

NCE70T1K2R

NCE70T1K2,NCE70T1K2D,NCE70T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, an

 5.2. Size:476K  ncepower
 nce70t1k2i nce70t1k2k.pdf pdf_icon

NCE70T1K2R

NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.3. Size:476K  ncepower
 nce70t1k2i.pdf pdf_icon

NCE70T1K2R

NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE6890K, NCE6990, NCE6990D, NCE70T180D, NCE70T180, NCE70T180F, NCE70T1K2K, NCE70T1K2I, 4435, NCE70T260D, NCE70T260, NCE70T260F, NCE70T360D, NCE70T360, NCE70T360F, NCE70T360K, NCE70T360I