Справочник MOSFET. NCE70T1K2R

 

NCE70T1K2R Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE70T1K2R
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 17 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.3 Ohm
   Тип корпуса: SOT223
     - подбор MOSFET транзистора по параметрам

 

NCE70T1K2R Datasheet (PDF)

 ..1. Size:415K  ncepower
 nce70t1k2r.pdf pdf_icon

NCE70T1K2R

NCE70T1K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap

 5.1. Size:594K  ncepower
 nce70t1k2f.pdf pdf_icon

NCE70T1K2R

NCE70T1K2,NCE70T1K2D,NCE70T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, an

 5.2. Size:476K  ncepower
 nce70t1k2i nce70t1k2k.pdf pdf_icon

NCE70T1K2R

NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.3. Size:476K  ncepower
 nce70t1k2i.pdf pdf_icon

NCE70T1K2R

NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

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History: BF511 | IRFTS8342 | DMN15H310SE | SIHF9540 | IXTX200N10L2 | PS05N20DA | NCE70N900R

 

 
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