NCE70T260. Аналоги и основные параметры
Наименование производителя: NCE70T260
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 131 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 74 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
Тип корпуса: TO220
Аналог (замена) для NCE70T260
- подборⓘ MOSFET транзистора по параметрам
NCE70T260 даташит
nce70t260d nce70t260 nce70t260f.pdf
NCE70T260D,NCE70T260,NCE70T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce70t260.pdf
NCE70T260D,NCE70T260,NCE70T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 15 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust
nce70t260f nce70t260 nce70t260d.pdf
NCE70T260D,NCE70T260,NCE70T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 15 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust
nce70t260i nce70t260k.pdf
NCE70T260I,NCE70T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
Другие IGBT... NCE6990D, NCE70T180D, NCE70T180, NCE70T180F, NCE70T1K2K, NCE70T1K2I, NCE70T1K2R, NCE70T260D, SKD502T, NCE70T260F, NCE70T360D, NCE70T360, NCE70T360F, NCE70T360K, NCE70T360I, NCE70T540I, NCE70T540K
History: SSG4842N | CS4N70U | KSS138 | IPB80N06S2-09
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