Справочник MOSFET. NCE70T360D

 

NCE70T360D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE70T360D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 101 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 54 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.39 Ohm
   Тип корпуса: TO263
     - подбор MOSFET транзистора по параметрам

 

NCE70T360D Datasheet (PDF)

 ..1. Size:1745K  ncepower
 nce70t360d.pdf pdf_icon

NCE70T360D

NCE70T360D,NCE70T360,NCE70T360FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu

 ..2. Size:1745K  ncepower
 nce70t360f nce70t360 nce70t360d.pdf pdf_icon

NCE70T360D

NCE70T360D,NCE70T360,NCE70T360FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 11.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu

 ..3. Size:609K  ncepower
 nce70t360d nce70t360 nce70t360f.pdf pdf_icon

NCE70T360D

NCE70T360D,NCE70T360,NCE70T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a

 5.1. Size:487K  ncepower
 nce70t360k nce70t360i.pdf pdf_icon

NCE70T360D

NCE70T360K,NCE70T360I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust

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History: 2SK1066 | RHU003N03FRA | KTHD3100C | AO6608 | ELM32405LA | RU1C001ZP | NVTR0202PL

 

 
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