NCE70T360. Аналоги и основные параметры
Наименование производителя: NCE70T360
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 101 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 54 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.39 Ohm
Тип корпуса: TO220
Аналог (замена) для NCE70T360
- подборⓘ MOSFET транзистора по параметрам
NCE70T360 даташит
nce70t360.pdf
NCE70T360D,NCE70T360,NCE70T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu
nce70t360f nce70t360 nce70t360d.pdf
NCE70T360D,NCE70T360,NCE70T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu
nce70t360d nce70t360 nce70t360f.pdf
NCE70T360D,NCE70T360,NCE70T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, a
nce70t360k nce70t360i.pdf
NCE70T360K,NCE70T360I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust
Другие IGBT... NCE70T180F, NCE70T1K2K, NCE70T1K2I, NCE70T1K2R, NCE70T260D, NCE70T260, NCE70T260F, NCE70T360D, AON7410, NCE70T360F, NCE70T360K, NCE70T360I, NCE70T540I, NCE70T540K, NCE70T680D, NCE70T680, NCE70T680F
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Список транзисторов
Обновления
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