Справочник MOSFET. NCE70T680D

 

NCE70T680D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE70T680D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 28 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.76 Ohm
   Тип корпуса: TO263
     - подбор MOSFET транзистора по параметрам

 

NCE70T680D Datasheet (PDF)

 ..1. Size:610K  ncepower
 nce70t680d nce70t680 nce70t680f.pdf pdf_icon

NCE70T680D

NCE70T680D,NCE70T680,NCE70T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:491K  ncepower
 nce70t680i.pdf pdf_icon

NCE70T680D

NCE70T680INCE70T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.2. Size:610K  ncepower
 nce70t680 nce70t680f.pdf pdf_icon

NCE70T680D

NCE70T680D,NCE70T680,NCE70T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.3. Size:491K  ncepower
 nce70t680i nce70t680k.pdf pdf_icon

NCE70T680D

NCE70T680INCE70T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

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History: AP9465BGH | JCS5N50CT | STD90N02L | NVMFS5C628N | SI7913DN | NCEP026N10F | MC11N005

 

 
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