Справочник MOSFET. NCE70T900I

 

NCE70T900I Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE70T900I
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 46 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 25 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.95 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для NCE70T900I

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE70T900I Datasheet (PDF)

 ..1. Size:439K  ncepower
nce70t900i.pdfpdf_icon

NCE70T900I

NCE70T900INCE70T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 ..2. Size:484K  ncepower
nce70t900i nce70t900k.pdfpdf_icon

NCE70T900I

NCE70T900INCE70T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.1. Size:707K  ncepower
nce70t900 nce70t900f.pdfpdf_icon

NCE70T900I

NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super VDS 700 V junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 Aindustrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.2. Size:404K  ncepower
nce70t900r.pdfpdf_icon

NCE70T900I

NCE70T900R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

Другие MOSFET... NCE70T540I , NCE70T540K , NCE70T680D , NCE70T680 , NCE70T680F , NCE70T900D , NCE70T900 , NCE70T900F , IRFZ24N , NCE70T900K , NCE7190A , NCE7560K , NCE80H12 , NCE80H12D , NCE80H15 , NCE80H16 , NCE80T320D .

History: AP75T10GP | NCEP40P65QU | PM516BZ | HGP130N12SL | P5015BD

 

 
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