NCE80T560F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE80T560F
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 33.2 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 25 nC
Время нарастания (tr): 11 ns
Выходная емкость (Cd): 75 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.56 Ohm
Тип корпуса: TO220F
Аналог (замена) для NCE80T560F
NCE80T560F Datasheet (PDF)
nce80t560d nce80t560 nce80t560f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80t560f nce80t560 nce80t560d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80td65bp nce80td65bt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce80t320d nce80t320 nce80t320f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80td60bp nce80td60bt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PbFreeProduct NCE80TD60BP,NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H
nce80t420 nce80t420f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 11 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria
nce80td65bp nce80td65bt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce80t320f nce80t320 nce80t320d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80t900d nce80t900 nce80t900f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE80T900D,NCE80T900,NCE80T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 900 m DS(ON)MAX with low gate charge. This super junction MOSFET fits the ID 6 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .