Справочник MOSFET. NCE80T560F

 

NCE80T560F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE80T560F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 33.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 25 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 75 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.56 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для NCE80T560F

 

 

NCE80T560F Datasheet (PDF)

 ..1. Size:613K  ncepower
nce80t560d nce80t560 nce80t560f.pdf

NCE80T560F
NCE80T560F

NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:613K  ncepower
nce80t560f nce80t560 nce80t560d.pdf

NCE80T560F
NCE80T560F

NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..3. Size:613K  ncepower
nce80t560f.pdf

NCE80T560F
NCE80T560F

NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:613K  ncepower
nce80t560d.pdf

NCE80T560F
NCE80T560F

NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.2. Size:613K  ncepower
nce80t560.pdf

NCE80T560F
NCE80T560F

NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 8.1. Size:661K  1
nce80td65bp nce80td65bt.pdf

NCE80T560F
NCE80T560F

PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 8.2. Size:1464K  ncepower
nce80td60bt.pdf

NCE80T560F
NCE80T560F

Pb Free ProductNCE80TD60BT600V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 8.3. Size:610K  ncepower
nce80t320d.pdf

NCE80T560F
NCE80T560F

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 8.4. Size:610K  ncepower
nce80t320f.pdf

NCE80T560F
NCE80T560F

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 8.5. Size:1542K  ncepower
nce80td65bp.pdf

NCE80T560F
NCE80T560F

Pb Free ProductNCE80TD65BP650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 8.6. Size:532K  ncepower
nce80t420.pdf

NCE80T560F
NCE80T560F

NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 11 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

 8.7. Size:610K  ncepower
nce80t320d nce80t320 nce80t320f.pdf

NCE80T560F
NCE80T560F

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 8.8. Size:660K  ncepower
nce80td60bp nce80td60bt.pdf

NCE80T560F
NCE80T560F

PbFreeProduct NCE80TD60BP,NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H

 8.9. Size:610K  ncepower
nce80t320.pdf

NCE80T560F
NCE80T560F

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 8.10. Size:532K  ncepower
nce80t420 nce80t420f.pdf

NCE80T560F
NCE80T560F

NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 11 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

 8.11. Size:661K  ncepower
nce80td65bp nce80td65bt.pdf

NCE80T560F
NCE80T560F

PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 8.12. Size:532K  ncepower
nce80t420f.pdf

NCE80T560F
NCE80T560F

NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 11 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

 8.13. Size:610K  ncepower
nce80t320f nce80t320 nce80t320d.pdf

NCE80T560F
NCE80T560F

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 8.14. Size:1449K  ncepower
nce80tc65bt.pdf

NCE80T560F
NCE80T560F

Pb Free ProductNCE80TC65BT650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 8.15. Size:1591K  ncepower
nce80td65bt4.pdf

NCE80T560F
NCE80T560F

Pb Free ProductNCE80TD65BT4650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 8.16. Size:605K  ncepower
nce80t900d nce80t900 nce80t900f.pdf

NCE80T560F
NCE80T560F

NCE80T900D,NCE80T900,NCE80T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 900 m DS(ON)MAX with low gate charge. This super junction MOSFET fits the ID 6 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 8.17. Size:1655K  ncepower
nce80td65bt.pdf

NCE80T560F
NCE80T560F

Pb Free ProductNCE80TD65BT650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 8.18. Size:1423K  ncepower
nce80td60bp.pdf

NCE80T560F
NCE80T560F

Pb Free ProductNCE80TD60BP600V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

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