NCE8205I. Аналоги и основные параметры
Наименование производителя: NCE8205I
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 125 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
Тип корпуса: TSSOP8
Аналог (замена) для NCE8205I
- подборⓘ MOSFET транзистора по параметрам
NCE8205I даташит
nce8205i.pdf
Pb Free Product http //www.ncepower.com NCE8205i NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205i uses advanced trench technology to provide D1 D2 excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gen
nce8205b.pdf
Pb Free Product http //www.ncepower.com NCE8205B NCE N-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gen
nce8205t.pdf
Pb Free Product http //www.ncepower.com NCE8205t NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The NCE8205t uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a Schematic diagram Battery protection or in other Switching application. Gen
nce8205a.pdf
Pb Free Product http //www.ncepower.com NCE8205A NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gener
Другие MOSFET... NCE80T560D , NCE80T560 , NCE80T560F , NCE80T900D , NCE80T900 , NCE80T900F , NCE8205 , NCE8205A , 75N75 , NCE8205t , NCE8290AC , NCE8295A , NCE8295AD , NCE8295AK , NCE82H110 , NCE82H110D , NCE82H140D .
History: 2SJ136
History: 2SJ136
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Список транзисторов
Обновления
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