NCE8295A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE8295A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 170 W
Предельно допустимое напряжение сток-исток |Uds|: 82 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 95 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 109.3 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 353 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm
Тип корпуса: TO220
NCE8295A Datasheet (PDF)
nce8295a.pdf
Pb Free Producthttp://www.ncepower.com NCE8295ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)
nce8295ag.pdf
http://www.ncepower.comNCE8295AGNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE8295AG uses advanced trench technology and design V =82V,I =95ADS Dto provide excellent R with low gate charge. This device is R
nce8295ak.pdf
Pb Free Producthttp://www.ncepower.com NCE8295AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =95A RDS(ON)
nce8295ai.pdf
Pb Free Producthttp://www.ncepower.comNCE8295AINCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE8295AI uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =82V,I =95ADS DR
nce8295ad.pdf
Pb Free Producthttp://www.ncepower.com NCE8295ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features Schematic diagram VDS =82V,ID =95A RDS(ON)
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: SWP058R75E7T
