Справочник MOSFET. NCEP0135AK

 

NCEP0135AK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP0135AK
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 26 nC
   trⓘ - Время нарастания: 2 ns
   Cossⓘ - Выходная емкость: 139 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
   Тип корпуса: TO252

 Аналог (замена) для NCEP0135AK

 

 

NCEP0135AK Datasheet (PDF)

 ..1. Size:460K  ncepower
 ncep0135ak.pdf

NCEP0135AK NCEP0135AK

Pb Free Producthttp://www.ncepower.com NCEP0135AKNCE N-Channel Super Trench Power MOSFET Description The NCEP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.1. Size:396K  ncepower
 ncep0135a.pdf

NCEP0135AK NCEP0135AK

Pb Free Producthttp://www.ncepower.com NCEP0135ANCE N-Channel Super Trench Power MOSFET Description The NCEP0135A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.2. Size:374K  ncepower
 ncep0135af.pdf

NCEP0135AK NCEP0135AK

http://www.ncepower.com NCEP0135AFNCE N-Channel Super Trench Power MOSFET Description The NCEP0135AFuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi

 7.1. Size:687K  ncepower
 ncep013nh40gu.pdf

NCEP0135AK NCEP0135AK

NCEP013NH40GUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP013NH40GU uses Super Trench III technology V =40V,I =276ADS Dthat is uniquely optimized to provide the most efficient highR =0.95m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =1.35m (typical) @ V =4.5VD

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