NCEP0178AF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP0178AF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 78 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 354 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: TO220F
- подбор MOSFET транзистора по параметрам
NCEP0178AF Datasheet (PDF)
ncep0178af.pdf

Pb Free Producthttp://www.ncepower.com NCEP0178AFNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep0178ak.pdf

Pb Free Producthttp://www.ncepower.com NCEP0178AKNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep0178al.pdf

http://www.ncepower.com NCEP0178ALNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep0178a.pdf

Pb Free Producthttp://www.ncepower.com NCEP0178ANCE N-Channel Super Trench Power MOSFET Description The NCEP0178A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IRF241 | NCE70T180D
History: IRF241 | NCE70T180D



Список транзисторов
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