Справочник MOSFET. NCEP0178AK

 

NCEP0178AK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP0178AK
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 125 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.2 V
   Максимально допустимый постоянный ток стока |Id|: 78 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 65 nC
   Время нарастания (tr): 10 ns
   Выходная емкость (Cd): 354 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0085 Ohm
   Тип корпуса: TO252

 Аналог (замена) для NCEP0178AK

 

 

NCEP0178AK Datasheet (PDF)

 ..1. Size:445K  ncepower
ncep0178ak.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP0178AKNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.1. Size:356K  ncepower
ncep0178af.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP0178AFNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.2. Size:368K  ncepower
ncep0178a.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP0178ANCE N-Channel Super Trench Power MOSFET Description The NCEP0178A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 8.1. Size:348K  ncepower
ncep01t13.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP01T13NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.2. Size:419K  ncepower
ncep0140ag.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP0140AGNCE N-Channel Super Trench Power MOSFET Description The NCEP0140AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.3. Size:396K  ncepower
ncep0135a.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP0135ANCE N-Channel Super Trench Power MOSFET Description The NCEP0135A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.4. Size:321K  ncepower
ncep01t13ad.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP01T13ADNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.5. Size:407K  ncepower
ncep018n85ll.pdf

NCEP0178AK
NCEP0178AK

NCEP018N85LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.3m , typical @ VGS=10V losses are minimized due to an extremely low combina

 8.6. Size:428K  ncepower
ncep0160a.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP0160ANCE N-Channel Super Trench Power MOSFET Description The NCEP0160A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Sche

 8.7. Size:317K  ncepower
ncep01t11.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP01T11NCE N-Channel Super Trench Power MOSFET Description The NCEP01T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.8. Size:343K  ncepower
ncep01t13a.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP01T13ANCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.9. Size:345K  ncepower
ncep01t18.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP01T18NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.10. Size:399K  ncepower
ncep01nd35ag.pdf

NCEP0178AK
NCEP0178AK

http://www.ncepower.com NCEP01ND35AGNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP01ND35AG uses Super Trench technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high RDS(ON)=18m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=22m (typical) @ VGS=4.5V switching power losses are

 8.11. Size:345K  ncepower
ncep01t15.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP01T15NCE N-Channel Super Trench Power MOSFET Description The NCEP01T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.12. Size:317K  ncepower
ncep01t13d.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP01T13DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.13. Size:313K  ncepower
ncep0116k.pdf

NCEP0178AK
NCEP0178AK

http://www.ncepower.com NCEP0116KNCE N-Channel Super Trench Power MOSFET Description The NCEP0116K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 8.14. Size:449K  ncepower
ncep0160f.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP0160FNCE N-Channel Super Trench Power MOSFET Description The NCEP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 8.15. Size:431K  ncepower
ncep0112as.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP0112ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0112AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.16. Size:460K  ncepower
ncep0135ak.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP0135AKNCE N-Channel Super Trench Power MOSFET Description The NCEP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.17. Size:347K  ncepower
ncep01t12.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP01T12NCE N-Channel Super Trench Power MOSFET Description The NCEP01T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.18. Size:323K  ncepower
ncep01t18t.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP01T18TNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.19. Size:295K  ncepower
ncep0120q.pdf

NCEP0178AK
NCEP0178AK

http://www.ncepower.com NCEP0120QNCE N-Channel Super Trench Power MOSFET Description The NCEP0120Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =20A frequency switching performance. Both conduction and RDS(ON)=36m (typical) @ VGS=10V switching power losses are minimized due to an extremely low E

 8.20. Size:440K  ncepower
ncep0114as.pdf

NCEP0178AK
NCEP0178AK

Pb Free Producthttp://www.ncepower.com NCEP0114ASNCE N-Channel Super Trench Power MOSFET Description The NCEP0114AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 4N60F

 

 
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