Справочник MOSFET. NCEP01T15

 

NCEP01T15 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP01T15
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 170 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 113 nC
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 795 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0038 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

NCEP01T15 Datasheet (PDF)

 ..1. Size:345K  ncepower
 ncep01t15.pdf pdf_icon

NCEP01T15

Pb Free Producthttp://www.ncepower.com NCEP01T15NCE N-Channel Super Trench Power MOSFET Description The NCEP01T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 6.1. Size:348K  ncepower
 ncep01t13.pdf pdf_icon

NCEP01T15

Pb Free Producthttp://www.ncepower.com NCEP01T13NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 6.2. Size:283K  ncepower
 ncep01t11d.pdf pdf_icon

NCEP01T15

Pb Free Producthttp://www.ncepower.com NCEP01T11DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.3. Size:321K  ncepower
 ncep01t13ad.pdf pdf_icon

NCEP01T15

Pb Free Producthttp://www.ncepower.com NCEP01T13ADNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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History: FQB25N33TM | AP2080K | TPCP8204

 

 
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