NCEP023N10LL - описание и поиск аналогов

 

NCEP023N10LL. Аналоги и основные параметры

Наименование производителя: NCEP023N10LL

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 380 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 300 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 27 ns

Cossⓘ - Выходная емкость: 1100 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm

Тип корпуса: TOLL

Аналог (замена) для NCEP023N10LL

- подборⓘ MOSFET транзистора по параметрам

 

NCEP023N10LL даташит

 ..1. Size:409K  ncepower
 ncep023n10ll.pdf pdf_icon

NCEP023N10LL

NCEP023N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.7m , typical@ VGS=10V losses are minimized due to an extremely low combinat

 4.1. Size:855K  ncepower
 ncep023n10d.pdf pdf_icon

NCEP023N10LL

NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =240A DS D switching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

 4.2. Size:2030K  ncepower
 ncep023n10t.pdf pdf_icon

NCEP023N10LL

NCEP023N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =280A DS D switching performance. Both conduction and switching power R =1.85m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinati

 4.3. Size:635K  ncepower
 ncep023n10 ncep023n10d.pdf pdf_icon

NCEP023N10LL

NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =240A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP01T13AD , NCEP01T13D , NCEP01T15 , NCEP01T18 , NCEP01T18T , NCEP020N30GU , NCEP023N10 , NCEP023N10D , IRFB4227 , NCEP023N85 , NCEP023N85D , NCEP02515K , NCEP02525F , NCEP02580 , NCEP02580F , NCEP028N85 , NCEP028N85D .

 

 

 

 

↑ Back to Top
.