NCEP028N85 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP028N85
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 245 W
Предельно допустимое напряжение сток-исток |Uds|: 85 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 200 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 124 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 1472 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0028 Ohm
Тип корпуса: TO220
Аналог (замена) для NCEP028N85
NCEP028N85 Datasheet (PDF)
ncep028n85 ncep028n85d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP028N85, NCEP028N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.55m , typical (TO-220)@ VGS=10V losses are minimized due to an ex
ncep028n12ll.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP028N12LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =230A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combin
ncep028n60agu.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP028N60AGUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP028N60AGU uses Super Trench II technology that V =60V,I =100ADS Dis uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =2.7m (typical) @ V =4.5VDS(ON) GSswitching
ncep020n60agu.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP020N60AGUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETGeneral FeaturesDescription V =60V,I =180ADS DThe NCEP020N60AGU uses Super Trench II technology thatR =1.8 m (typical) @ V =10VDS(ON) GSis uniquely optimized to provide the most efficient highR =2.5 m (typical) @ V =4.5VDS(ON) GSfrequency switching performance. Both conduction and
ncep020n10ll.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP020N10LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =330ADS Dswitching performance. Both conduction and switching power R =1.5m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep026n10m.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP026N10M, NCEP026N10MDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an
ncep02590d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP02590DNCE N-Channel Super Trench Power MOSFET Description The NCEP02590D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep0225f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP0225FNCE N-Channel Super Trench Power MOSFET Description The NCEP0225F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep02503s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP02503SNCE N-Channel Super Trench Power MOSFET Description The NCEP02503S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep025n85ll.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Pb Free ProductNCEP025N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =260ADS Duniquely optimized to provide the most efficient high frequencyR =2.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product
ncep0225k.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP0225KNCE N-Channel Super Trench Power MOSFET Description The NCEP0225K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep020n85ll.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP020N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =295ADS Dswitching performance. Both conduction and switching powerR =1.6m , typical @ V =10VDS(ON) GSlosses are minimized due to a
ncep0218g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP0218GNCE N-Channel Super Trench Power MOSFET Description The NCEP0218G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =18A frequency switching performance. Both conduction and RDS(ON)=70m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com
ncep023n10t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP023N10TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =280ADS Dswitching performance. Both conduction and switching power R =1.85m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
ncep023n10 ncep023n10d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =240A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep023n85m.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP023N85M, NCEP023N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ex
ncep0230d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Pb Free Producthttp://www.ncepower.com NCEP0230DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP0230D uses Super Trench II technology that is V =200V,I =30ADS Duniquely optimized to provide the most efficient highR =40m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and Excellent gate charge x R product(FO
ncep0218k.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP0218KNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP0218K uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switching
ncep02515f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Pb Free Producthttp://www.ncepower.com NCEP02515FNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02515F uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =250V,I =15ADS Dfrequency switching performance. Both conduction andR =220m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to
ncep020n30qu.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP020N30QUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =30V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =1.75m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.0m (typical) @ V =4.5V
ncep0220f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP0220FNCE N-Channel Super Trench Power MOSFET Description The NCEP0220F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep025n60ag.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP025N60AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP025N60AG uses Super Trench II technology that is V =60V,I =165ADS Duniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.5m (typical) @ V =4.5VDS(ON)
ncep02t10t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.comNCEP02T10TNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02T10T uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch
ncep025n60 ncep025n60d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP025N60, NCEP025N60DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =190ADS Dswitching performance. Both conduction and switching powerR =2.25m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely
ncep02590t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP02590TNCE N-Channel Super Trench Power MOSFET Description The NCEP02590T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep02525f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP02525FNCE N-Channel Super Trench Power MOSFET Description The NCEP02525F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep0225g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP0225GNCE N-Channel Super Trench Power MOSFET Description The NCEP0225G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com
ncep020n85 ncep020n85d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep025n30g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP025N30GNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =30V,I =85ADS Duniquely optimized to provide the most efficient high frequencyR =2.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.8m (typical) @ V =4.5V
ncep02t10d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Pb Free Producthttp://www.ncepower.com NCEP02T10DNCE N-Channel Super Trench Power MOSFET Description The NCEP02T10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep025f90d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP025F90Dhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP025F90D uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =250V,I =90ADS Dfrequency switching performance. Both conduction and R
ncep02505s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP02505SNCE N-Channel Super Trench Power MOSFET Description The NCEP02505S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep02t11d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP02T11DNCE N-Channel Super Trench Power MOSFET Description The NCEP02T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Schematic diagram
ncep0260 ncep0260d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.comNCEP0260,NCEP0260DNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench technology that is V =200V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =16.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x
ncep025f90t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP025F90TNCE N-Channel Super Trench Power MOSFET Description The NCEP025F90T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep02580.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP02580NCE N-Channel Super Trench Power MOSFET Description The NCEP02580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep026n10ll.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP026N10LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =280A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combinat
ncep02590.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP02590NCE N-Channel Super Trench Power MOSFET Description The NCEP02590 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep02525g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP02525GNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =250V,I =25ADS Dswitching performance. Both conduction and switching power R =72m (typical) @ V =10VDS(ON) GSlosses are minimized due to an extrem
ncep026n85 ncep026n85d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP026N85,NCEP026N85DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =240ADS Duniquely optimized to provide the most efficient high frequencyR =2.2m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =2.0m , typical (TO-263)@ V =10
ncep025n60g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP025N60GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60G uses Super Trench II technology that is VDS =60V,ID =165A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.2m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)
ncep02515k.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP02515KNCE N-Channel Super Trench Power MOSFET Description The NCEP02515K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep020n85t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP020N85TNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.6m , typical @ VGS=10V losses are minimized due to an extremely low combinati
ncep023n85 ncep023n85d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =260A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep020n60gu.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP020N60GUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP020N60GU uses Super Trench II technology that is V =60V,I =180ADS Duniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product
ncep02t10.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.comNCEP02T10NCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02T10 uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchin
ncep023n10ll.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP023N10LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.7m , typical@ VGS=10V losses are minimized due to an extremely low combinat
ncep029n10 ncep029n10d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP029N10,NCEP029N10Dhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =185ADS Duniquely optimized to provide the most efficient high frequencyR =2.6m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =2.4m
ncep023n85t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP023N85TNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =290A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.8m , typical@ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) product(FOM) lo
ncep0212f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP0212FNCE N-Channel Super Trench Power MOSFET Description The NCEP0212F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep025n12ll.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP025N12LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =255A switching performance. Both conduction and switching power RDS(ON)=1.85m , typical@ VGS=10V losses are minimized due to an extremely low combina
ncep02t10ll.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.comNCEP02T10LLNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =200V,I =100ADS Duniquely optimized to provide the most efficient high frequency R =9.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product
ncep02525k.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP02525KNCE N-Channel Super Trench Power MOSFET Description The NCEP02525K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep026n10t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP026N10TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =230ADS Dswitching performance. Both conduction and switching powerR =2.15m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep02580f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP02580FNCE N-Channel Super Trench Power MOSFET Description The NCEP02580F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep026n10 ncep026n10d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP026N10, NCEP026N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =200ADS Dswitching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext
ncep02580d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.comNCEP02580DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02580D uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequencyDS(ON) gswitch
ncep026n10f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCEP026N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.9m , typical @ VGS=10V losses are minimized due to an extremely low combinat
ncep020n30bqu.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP3065BQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065BQU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc
ncep020n30gu.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP020N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.75m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.0m (typical) @
ncep023nh30gu.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.comNCEP023NH30GUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP023NH30GU uses Super Trench III technologyV =30V,I =114ADS Dthat is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =3.3m (typical) @ V =4.5VDS(ON) GSswitchi
ncep0210q.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP0210QNCE N-Channel Super Trench Power MOSFET Description The NCEP0210Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =10A frequency switching performance. Both conduction and RDS(ON)=145m (typical) @ VGS=10V switching power losses are minimized due to an extremely low co
ncep02t11t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP02T11TNCE N-Channel Super Trench Power MOSFET Description The NCEP02T11T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .