Справочник MOSFET. NCEP033N85

 

NCEP033N85 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP033N85
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 220 W
   Предельно допустимое напряжение сток-исток |Uds|: 85 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 160 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 115 nC
   Время нарастания (tr): 12.5 ns
   Выходная емкость (Cd): 1100 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0033 Ohm
   Тип корпуса: TO220

 Аналог (замена) для NCEP033N85

 

 

NCEP033N85 Datasheet (PDF)

 ..1. Size:332K  ncepower
ncep033n85 ncep033n85d.pdf

NCEP033N85
NCEP033N85

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 0.1. Size:701K  ncepower
ncep033n85m.pdf

NCEP033N85
NCEP033N85

NCEP033N85M, NCEP033N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

 6.1. Size:402K  ncepower
ncep033n10m.pdf

NCEP033N85
NCEP033N85

NCEP033N10M, NCEP033N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO

 6.2. Size:402K  ncepower
ncep033n10 ncep033n10d.pdf

NCEP033N85
NCEP033N85

NCEP033N10, NCEP033N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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