NCEP039N10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP039N10
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 220 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 135 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 116 nC
Время нарастания (tr): 11.5 ns
Выходная емкость (Cd): 803 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0039 Ohm
Тип корпуса: TO220
Аналог (замена) для NCEP039N10
NCEP039N10 Datasheet (PDF)
ncep039n10 ncep039n10d.pdf
NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO
ncep039n10f.pdf
NCEP039N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =62A switching performance. Both conduction and switching power RDS(ON)=4.4m , typical @ VGS=10V losses are minimized due to an extremely low combinati
ncep039n10m ncep039n10md.pdf
NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (
ncep036n10msl.pdf
NCEP036N10MSLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =215ADS Dswitching performance. Both conduction and switching power R =3.0m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep035n60ag.pdf
Pb Free Producthttp://www.ncepower.com NCEP035N60AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP035N60AG uses Super Trench II technology that is V =60V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =3.5m (typical) @
ncep035n10m.pdf
NCEP035N10M, NCEP035N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.0m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.8m , typical (TO
ncep030n60agu.pdf
Pb Free Producthttp://www.ncepower.com NCEP030N60AGUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP030N60AGU uses Super Trench II technology that V =60V,I =95ADS Dis uniquely optimized to provide the most efficient high R =2.2m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =3.0m (typical) @ V =4.5VDS(ON
ncep030n85gu.pdf
http://www.ncepower.com NCEP030N85GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP030N85GU uses Super Trench II technology that is V =85V,I =140ADS Duniquely optimized to provide the most efficient high frequencyR =2.65m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R pro
ncep035n85 ncep035n85d.pdf
NCEP035N85,NCEP035N85Dhttp://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m
ncep035n60k.pdf
http://www.ncepower.com NCEP035N60KNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP035N60K uses Super Trench II technology that is V =60V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc
ncep035n60ak.pdf
http://www.ncepower.com NCEP035N60AKNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP035N60AK uses Super Trench II technology that is V =60V,I =130ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =3.5m (typical) @ V =4.5VDS(ON)
ncep030n12 ncep030n12d.pdf
NCEP030N12,NCEP030N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26
ncep031n85m.pdf
Pb Free ProductNCEP031N85MNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =180ADS Dswitching performance. Both conduction and switching powerR =2.9m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to a
ncep035n72gu.pdf
NCEP035N72GUNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =72V,I =120ADS Dswitching performance. Both conduction and switching powerR =2.4m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep035n12vd.pdf
NCEP035N12VDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin
ncep035n12 ncep035n12d.pdf
NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep033n10m.pdf
NCEP033N10M, NCEP033N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO
ncep033n85m.pdf
NCEP033N85M, NCEP033N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep033n10 ncep033n10d.pdf
NCEP033N10, NCEP033N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2
ncep035n72.pdf
NCEP035N72NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =72V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.3m , typical @ VGS=10V losses are minimized due to an extremely low combinat
ncep038n10gu.pdf
http://www.ncepower.com NCEP038N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP038N10GU uses Super Trench II technology that is V =100V,I =135ADS Duniquely optimized to provide the most efficient high frequencyR =3.45m (Typ.) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produ
ncep030n85ll.pdf
NCEP030N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =210ADS Dswitching performance. Both conduction and switching power R =2.65m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep030n30gu.pdf
http://www.ncepower.com NCEP030N30GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =30V,I =65ADS Duniquely optimized to provide the most efficient high frequencyR =2.65m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4m (typical) @ V =4.5V
ncep033n85 ncep033n85d.pdf
NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex
ncep035n85gu.pdf
http://www.ncepower.com NCEP035N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N85GU uses Super Trench II technology that is VDS =85V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremel
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