NCEP055N85 - описание и поиск аналогов

NCEP055N85, NCEP055N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =100A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

NCEP055N85, NCEP055N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =100A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

NCEP055N85, NCEP055N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =100A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

NCEP055N12AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =110A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.4m , typical @ VGS=4.5V losses are m

NCEP055N10U NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combin

NCEP055N10, NCEP055N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

http //www.ncepower.com NCEP055N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.4m (typical) @

http //www.ncepower.com NCEP055N60GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N60GU uses Super Trench II technology that is VDS =60V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m (Typ.) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) p

http //www.ncepower.com NCEP055N10G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N10G uses Super Trench II technology that is VDS =100V,ID =105A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.9m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on

NCEP055N10M, NCEP055N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =110A DS D switching performance. Both conduction and switching power R =5.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

NCEP055N10, NCEP055N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

NCEP055N10, NCEP055N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

NCEP055N12,NCEP055N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

NCEP055N12,NCEP055N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

NCEP055N12,NCEP055N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

NCEP055N12G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combination