Справочник MOSFET. NCEP058N85D

 

NCEP058N85D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP058N85D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 95 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 540 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0058 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для NCEP058N85D

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP058N85D Datasheet (PDF)

 ..1. Size:345K  ncepower
 ncep058n85d.pdf pdf_icon

NCEP058N85D

NCEP058N85, NCEP058N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr

 ..2. Size:326K  ncepower
 ncep058n85 ncep058n85d.pdf pdf_icon

NCEP058N85D

NCEP058N85, NCEP058N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr

 4.1. Size:345K  ncepower
 ncep058n85.pdf pdf_icon

NCEP058N85D

NCEP058N85, NCEP058N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extr

 4.2. Size:328K  ncepower
 ncep058n85gu.pdf pdf_icon

NCEP058N85D

NCEP058N85GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=4.8m , typical@ VGS=10V losses are minimized due to an extremely low combinatio

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP040N85D , NCEP045N10 , NCEP045N10D , NCEP050N85 , NCEP050N85D , NCEP055N85 , NCEP055N85D , NCEP058N85 , 4N60 , NCEP065N85 , NCEP068N10AG , NCEP068N10AK , NCEP068N10G , NCEP072N10 , NCEP12T12 , NCEP12T12D , NCEP1520 .

 

 
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