NCEP1545G datasheet, аналоги, основные параметры
Наименование производителя: NCEP1545G 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 110 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 6.5 ns
Cossⓘ - Выходная емкость: 162 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
Тип корпуса: DFN5X6-8L
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Аналог (замена) для NCEP1545G
- подборⓘ MOSFET транзистора по параметрам
NCEP1545G даташит
ncep1545g.pdf
http //www.ncepower.com NCEP1545G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545G uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=24m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching pow
ncep1545ag.pdf
http //www.ncepower.com NCEP1545AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AG uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=26m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=30m (typical) @ VGS=4.5V switching power losses are mi
ncep1545k.pdf
Pb Free Product http //www.ncepower.com NCEP1545K NCE N-Channel Super Trench Power MOSFET Description The NCEP1545K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep1545a.pdf
http //www.ncepower.com NCEP1545A NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AK uses Super Trench technology that is V =150V,I =45A DS D uniquely optimized to provide the most efficient high R =22m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =28m (typical) @ V =4.5V DS(ON) GS switching power losses ar
Другие IGBT... NCEP065N85, NCEP068N10AG, NCEP068N10AK, NCEP068N10G, NCEP072N10, NCEP12T12, NCEP12T12D, NCEP1520, AON7410, NCEP1545K, NCEP1570, NCEP1570D, NCEP1580, NCEP15T14, NCEP15T14D, NCEP25N10AK, NCEP3040Q
Параметры MOSFET. Взаимосвязь и компромиссы
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Список транзисторов
Обновления
MOSFET: CS95118 | CS85105A | CS75N45 | CS72N12 | CS55N50 | CS48N75A | CS40N27 | MSQ60P04D | MSQ40P07D | MSQ30P40D | MSQ30P15 | MSQ30P07D | MSQ100N03D | MSHM60P14 | MSHM40N085 | MSHM30N46
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