NCEP40P80D - описание и поиск аналогов

http //www.ncepower.com NCEP40P80D NCE P-Channel Super Trench Power MOSFET Description The NCEP40P80D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

Pb Free Product http //www.ncepower.com NCEP40P80K NCE P-Channel Super Trench Power MOSFET Description The NCEP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

http //www.ncepower.com NCEP40P80G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P80G uses Super Trench technology that is VDS =-40V,ID =-80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=-10V switching performance. Both conduction and switching power RDS(ON)=9.0m (typical) @ VGS=-4.5V

http //www.ncepower.com NCEP40P65GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)

http //www.ncepower.com NCEP40PT15D NCE P-Channel Super Trench Power MOSFET Description The NCEP40PT15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

http //www.ncepower.com NCEP40PT15G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT15G uses Super Trench technology that is V =-40V,I =-150A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5V DS(ON) GS

http //www.ncepower.com NCEP40P60K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60K uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G

http //www.ncepower.com NCEP40PT13GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13GU uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =4.8m (typical) @ V =-4.5V DS(ON

http //www.ncepower.com NCEP40PT13D NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13D uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.85m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =5.0m (typical) @ V =-4.5V DS(ON)

http //www.ncepower.com NCEP40PT12K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT12K uses Super Trench technology that is V =-40V,I =-120A DS D uniquely optimized to provide the most efficient high frequency R =4.55m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =7.0m (typical) @ V =-4.5V DS(ON)

http //www.ncepower.com NCEP40P65QU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65QU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)

http //www.ncepower.com NCEP40P07S NCE P-Channel Super Trench Power MOSFET Description The NCEP40P07S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

http //www.ncepower.com NCEP40P60G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60G uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G

http //www.ncepower.com NCEP40P60Q NCE P-Channel Super Trench Power MOSFET Description The NCEP40P60Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-40V,I =-60A DS D switching performance. Both conduction and switching power R =8.8m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremely lo

http //www.ncepower.com NCEP40PT30VD NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT30VD uses Super Trench technology that is V =-40V,I =-300A DS D uniquely optimized to provide the most efficient high R =1.6m , typical@ V =-10V DS(ON) GS frequency switching performance. Both conduction and R =2.2m , typical@ V =-4.5V DS(ON) GS switching p

http //www.ncepower.com NCEP40P35GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P35GU uses Super Trench technology that is V =-40V,I =-35A DS D uniquely optimized to provide the most efficient high frequency R =19.0m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =28.0m (typical) @ V =-4.5V DS(ON)

http //www.ncepower.com NCEP40P30K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P30K uses Super Trench technology that is V =-40V,I =-30A DS D uniquely optimized to provide the most efficient high frequency R =22.5m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =31.5m (typical) @ V =-4.5V DS(ON) G

http //www.ncepower.com NCEP40P30Q NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P30Q uses Super Trench technology that is V =-40V,I =-30A DS D uniquely optimized to provide the most efficient high frequency R =21.0m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =32.0m (typical) @ V =-4.5V DS(ON) G