NCEP40T11G. Аналоги и основные параметры
Наименование производителя: NCEP40T11G
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 860 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEP40T11G
- подборⓘ MOSFET транзистора по параметрам
NCEP40T11G даташит
ncep40t11g.pdf
Pb Free Product http //www.ncepower.com NCEP40T11G NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t11.pdf
http //www.ncepower.com NCEP40T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi
ncep40t11ak.pdf
Pb Free Product http //www.ncepower.com NCEP40T11AK NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig
ncep40t11k.pdf
http //www.ncepower.com NCEP40T11K NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch
Другие MOSFET... NCEP3090GU , NCEP30T12G , NCEP30T13GU , NCEP4040Q , NCEP4065QU , NCEP40P80D , NCEP40P80K , NCEP40PT15D , IRF2807 , NCEP40T13GU , NCEP40T14G , NCEP40T15A , NCEP40T17A , NCEP6020AS , NCEP6080AG , NCEP6090 , NCEP6090K .
History: AP3N2R8H
History: AP3N2R8H
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