NCEP40T11G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP40T11G
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 860 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: DFN5X6-8L
- подбор MOSFET транзистора по параметрам
NCEP40T11G Datasheet (PDF)
ncep40t11g.pdf

Pb Free Producthttp://www.ncepower.com NCEP40T11GNCE N-Channel Super Trench Power MOSFET Description The NCEP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t11.pdf

http://www.ncepower.com NCEP40T11NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi
ncep40t11ak.pdf

Pb Free Producthttp://www.ncepower.com NCEP40T11AKNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T11AK uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig
ncep40t11k.pdf

http://www.ncepower.comNCEP40T11KNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T11K uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SNN1530NL | SNN0310Q



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