NCEP40T17A. Аналоги и основные параметры
Наименование производителя: NCEP40T17A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 170 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 7.2 ns
Cossⓘ - Выходная емкость: 1930 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0017 Ohm
Тип корпуса: TO220
Аналог (замена) для NCEP40T17A
- подборⓘ MOSFET транзистора по параметрам
NCEP40T17A даташит
ncep40t17a.pdf
Pb Free Product http //www.ncepower.com NCEP40T17A NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t17ad.pdf
Pb Free Product http //www.ncepower.com NCEP40T17AD NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig
ncep40t17at.pdf
Pb Free Product http //www.ncepower.com NCEP40T17AT NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17ATuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t17ag.pdf
http //www.ncepower.com NCEP40T17AG NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
Другие MOSFET... NCEP4065QU , NCEP40P80D , NCEP40P80K , NCEP40PT15D , NCEP40T11G , NCEP40T13GU , NCEP40T14G , NCEP40T15A , 8N60 , NCEP6020AS , NCEP6080AG , NCEP6090 , NCEP6090K , NCEP60T12AK , NCEP60T12T , NCEP60T15G , NCEP60T18 .
History: AGM4025D | SI2318DS-T1-GE3 | S70N06RP
History: AGM4025D | SI2318DS-T1-GE3 | S70N06RP
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Список транзисторов
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