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NCEP6020AS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP6020AS
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 3.5 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.4 V
   Максимально допустимый постоянный ток стока |Id|: 20 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 67 nC
   Время нарастания (tr): 5 ns
   Выходная емкость (Cd): 680 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0045 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для NCEP6020AS

 

 

NCEP6020AS Datasheet (PDF)

 ..1. Size:472K  ncepower
ncep6020as.pdf

NCEP6020AS
NCEP6020AS

Pb Free Product http://www.ncepower.com NCEP6020AS NCE N-Channel Super Trench Power MOSFET Description The NCEP6020AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

 8.1. Size:337K  ncepower
ncep6090gu.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6090GUNCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low

 8.2. Size:493K  ncepower
ncep6080ag.pdf

NCEP6020AS
NCEP6020AS

Pb Free Product http://www.ncepower.com NCEP6080AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6080AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

 8.3. Size:556K  ncepower
ncep6050qu.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6050QUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6050QU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =50ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely lowc

 8.4. Size:341K  ncepower
ncep6090.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6090NCE N-Channel Super Trench Power MOSFET Description The NCEP6090 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 8.5. Size:1092K  ncepower
ncep6090d.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6090DNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =90ADS Dswitching performance. Both conduction and switching power R =6.4m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely

 8.6. Size:412K  ncepower
ncep6080g.pdf

NCEP6020AS
NCEP6020AS

Pb Free Producthttp://www.ncepower.com NCEP6080GNCE N-Channel Super Trench Power MOSFET Description The NCEP6080G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.7. Size:716K  ncepower
ncep6035aqu.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6035AQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6035AQU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =35ADS Dfrequency switching performance. Both conduction and R =10.0m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely low

 8.8. Size:326K  ncepower
ncep6090ak.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6090AKNCE N-Channel Super Trench Power MOSFET Description The NCEP6090AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.9. Size:310K  ncepower
ncep60nd30ag.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP60ND30AGNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP60ND30AG uses Super Trench technology that is VDS =60V,ID =30A uniquely optimized to provide the most efficient high RDS(ON)=12m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=15m (typical) @ VGS=4.5V switching power losses are

 8.10. Size:305K  ncepower
ncep6012as.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6012ASNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6012AS uses Super Trench technology that is VDS =60V,ID =12A uniquely optimized to provide the most efficient high RDS(ON)=12.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=14.5m (typical) @ VGS=4.5V switching power losses are

 8.11. Size:336K  ncepower
ncep60t15g.pdf

NCEP6020AS
NCEP6020AS

Pb Free Producthttp://www.ncepower.com NCEP60T15GNCE N-Channel Super Trench Power MOSFET Description The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.12. Size:327K  ncepower
ncep6040agu.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6040AGUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6040AGU uses Super Trench technology that is VDS =60V,ID =40A uniquely optimized to provide the most efficient high RDS(ON)=10m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=13m (typical) @ VGS=4.5V switching power losses are mi

 8.13. Size:339K  ncepower
ncep60t20ll.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP60T20LLNCE N-Channel Super Trench Power MOSFET Description The NCEP60T20LL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.14. Size:320K  ncepower
ncep60t18.pdf

NCEP6020AS
NCEP6020AS

Pb Free Producthttp://www.ncepower.com NCEP60T18NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.15. Size:405K  ncepower
ncep6090k.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6090KNCE N-Channel Super Trench Power MOSFET Description The NCEP6090K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 8.16. Size:322K  ncepower
ncep6035ag.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6035AGNCE N-Channel Super Trench Power MOSFET Description The NCEP6035AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =35A frequency switching performance. Both conduction and RDS(ON)=9.8m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS

 8.17. Size:942K  ncepower
ncep60t20d.pdf

NCEP6020AS
NCEP6020AS

Pb Free Producthttp://www.ncepower.comNCEP60T20DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP60T20D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh

 8.18. Size:365K  ncepower
ncep6016as.pdf

NCEP6020AS
NCEP6020AS

Pb Free Producthttp://www.ncepower.com NCEP6016ASNCE N-Channel Super Trench Power MOSFET Description The NCEP6016AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.19. Size:399K  ncepower
ncep60t20.pdf

NCEP6020AS
NCEP6020AS

Pb Free Producthttp://www.ncepower.com NCEP60T20NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.20. Size:648K  ncepower
ncep6055gu.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6055GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6055GU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =55ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely lowc

 8.21. Size:326K  ncepower
ncep60t18a.pdf

NCEP6020AS
NCEP6020AS

Pb Free Producthttp://www.ncepower.com NCEP60T18ANCE N-Channel Super Trench Power MOSFET Description The NCEP60T18A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.22. Size:321K  ncepower
ncep6015as.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6015ASNCE N-Channel Super Trench Power MOSFET Description The NCEP6015AS uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =15A frequency switching performance. Both conduction and RDS(ON)=8.3m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS

 8.23. Size:434K  ncepower
ncep60t12k.pdf

NCEP6020AS
NCEP6020AS

Pb Free Producthttp://www.ncepower.com NCEP60T12KNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.24. Size:669K  ncepower
ncep6060agu.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.comNCEP6060AGUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6060AGU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency swit

 8.25. Size:688K  ncepower
ncep6060gu.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6060GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6060GU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =60ADS Dfrequency switching performance. Both conduction and R =5.6m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely low

 8.26. Size:487K  ncepower
ncep60t12a.pdf

NCEP6020AS
NCEP6020AS

Pb Free Product http://www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

 8.27. Size:352K  ncepower
ncep6090agu.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6090AGUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6090AGU uses Super Trench technology that is VDS =60V,ID =90A uniquely optimized to provide the most efficient high RDS(ON)=2.8m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.5m (typical) @ VGS=4.5V switching power losses are

 8.28. Size:374K  ncepower
ncep60t20t.pdf

NCEP6020AS
NCEP6020AS

Pb Free Producthttp://www.ncepower.com NCEP60T20TNCE N-Channel Super Trench Power MOSFET Description The NCEP60T20T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.29. Size:630K  ncepower
ncep6050aqu.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6050AQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6050AQU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =50ADS Dfrequency switching performance. Both conduction and R =6.5m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely low

 8.30. Size:342K  ncepower
ncep60t15ag.pdf

NCEP6020AS
NCEP6020AS

Pb Free Producthttp://www.ncepower.com NCEP60T15AGNCE N-Channel Super Trench Power MOSFET Description The NCEP60T15AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.31. Size:452K  ncepower
ncep60t12ak.pdf

NCEP6020AS
NCEP6020AS

Pb Free Producthttp://www.ncepower.com NCEP60T12AKNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.32. Size:388K  ncepower
ncep60t20a.pdf

NCEP6020AS
NCEP6020AS

Pb Free Producthttp://www.ncepower.com NCEP60T20ANCE N-Channel Super Trench Power MOSFET Description The NCEP60T20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.33. Size:348K  ncepower
ncep60t12t.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP60T12TNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.34. Size:1005K  ncepower
ncep6055agu.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP6055AGUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP6055AGU uses Super Trench technology that is V =60V,I =55ADS Duniquely optimized to provide the most efficient high frequencyR =6.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.7m (typical) @ V =4.5VDS(ON) GSl

 8.35. Size:602K  ncepower
ncep60nd60g.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP60ND60GNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP60ND60G uses Super Trench technology that is V =60V,I =55ADS Duniquely optimized to provide the most efficient highR =7.8m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and Excellent gate charge x R product(FOM)DS(on)switchi

 8.36. Size:324K  ncepower
ncep60t18d.pdf

NCEP6020AS
NCEP6020AS

http://www.ncepower.com NCEP60T18DNCE N-Channel Super Trench Power MOSFET Description The NCEP60T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.37. Size:1113K  ncepower
ncep60t12ad.pdf

NCEP6020AS
NCEP6020AS

Pb Free ProductNCEP60T12ADhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP60T12AD uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =120ADS Dfrequency switching performance. Both conduction and R

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