Справочник MOSFET. NCEP6090K

 

NCEP6090K Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP6090K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 26.9 nC
   trⓘ - Время нарастания: 2 ns
   Cossⓘ - Выходная емкость: 345 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0069 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

NCEP6090K Datasheet (PDF)

 ..1. Size:405K  ncepower
 ncep6090k.pdf pdf_icon

NCEP6090K

http://www.ncepower.com NCEP6090KNCE N-Channel Super Trench Power MOSFET Description The NCEP6090K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 6.1. Size:337K  ncepower
 ncep6090gu.pdf pdf_icon

NCEP6090K

http://www.ncepower.com NCEP6090GUNCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low

 6.2. Size:341K  ncepower
 ncep6090.pdf pdf_icon

NCEP6090K

http://www.ncepower.com NCEP6090NCE N-Channel Super Trench Power MOSFET Description The NCEP6090 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 6.3. Size:1092K  ncepower
 ncep6090d.pdf pdf_icon

NCEP6090K

http://www.ncepower.com NCEP6090DNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =90ADS Dswitching performance. Both conduction and switching power R =6.4m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely

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