NCEP60T20A. Аналоги и основные параметры
Наименование производителя: NCEP60T20A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 255 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 1600 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
Тип корпуса: TO220
Аналог (замена) для NCEP60T20A
- подборⓘ MOSFET транзистора по параметрам
NCEP60T20A даташит
ncep60t20a.pdf
Pb Free Product http //www.ncepower.com NCEP60T20A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep60t20ll.pdf
http //www.ncepower.com NCEP60T20LL NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20LL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep60t20d.pdf
Pb Free Product http //www.ncepower.com NCEP60T20D NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high
ncep60t20.pdf
Pb Free Product http //www.ncepower.com NCEP60T20 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
Другие MOSFET... NCEP6080AG , NCEP6090 , NCEP6090K , NCEP60T12AK , NCEP60T12T , NCEP60T15G , NCEP60T18 , NCEP60T20 , IRF830 , NCEP60T20T , NCEP85T11 , NCEP85T12 , NCEP85T12D , NCEP85T14 , NCEP85T14D , NCEP85T15 , NCEP85T16 .
History: MDS3653URH | SVT068R5NT | MTB028N10QNCQ8 | IRLML5203PBF | H10N60F | 2SK3915-01MR | ME4454
History: MDS3653URH | SVT068R5NT | MTB028N10QNCQ8 | IRLML5203PBF | H10N60F | 2SK3915-01MR | ME4454
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