NCEP60T20A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP60T20A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 255 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 1600 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
Тип корпуса: TO220
Аналог (замена) для NCEP60T20A
NCEP60T20A Datasheet (PDF)
ncep60t20a.pdf

Pb Free Producthttp://www.ncepower.com NCEP60T20ANCE N-Channel Super Trench Power MOSFET Description The NCEP60T20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep60t20ll.pdf

http://www.ncepower.com NCEP60T20LLNCE N-Channel Super Trench Power MOSFET Description The NCEP60T20LL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep60t20d.pdf

Pb Free Producthttp://www.ncepower.comNCEP60T20DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP60T20D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh
ncep60t20.pdf

Pb Free Producthttp://www.ncepower.com NCEP60T20NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
Другие MOSFET... NCEP6080AG , NCEP6090 , NCEP6090K , NCEP60T12AK , NCEP60T12T , NCEP60T15G , NCEP60T18 , NCEP60T20 , IRF1405 , NCEP60T20T , NCEP85T11 , NCEP85T12 , NCEP85T12D , NCEP85T14 , NCEP85T14D , NCEP85T15 , NCEP85T16 .
History: IPP50CN10NG | MPF102 | HRD85N08K
History: IPP50CN10NG | MPF102 | HRD85N08K



Список транзисторов
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