Справочник MOSFET. NCEP85T12

 

NCEP85T12 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: NCEP85T12

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 160 W

Предельно допустимое напряжение сток-исток |Uds|: 85 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 4.5 V

Максимально допустимый постоянный ток стока |Id|: 120 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 55 nC

Время нарастания (tr): 12.5 ns

Выходная емкость (Cd): 830 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0053 Ohm

Тип корпуса: TO220

Аналог (замена) для NCEP85T12

 

 

NCEP85T12 Datasheet (PDF)

..1. ncep85t12.pdf Size:323K _ncepower

NCEP85T12
NCEP85T12

Pb Free Producthttp://www.ncepower.com NCEP85T12NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

0.1. ncep85t12d.pdf Size:347K _ncepower

NCEP85T12
NCEP85T12

Pb Free Producthttp://www.ncepower.com NCEP85T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

6.1. ncep85t16.pdf Size:345K _ncepower

NCEP85T12
NCEP85T12

Pb Free Producthttp://www.ncepower.com NCEP85T16NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

6.2. ncep85t14.pdf Size:385K _ncepower

NCEP85T12
NCEP85T12

Pb Free Producthttp://www.ncepower.com NCEP85T14NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 6.3. ncep85t15.pdf Size:342K _ncepower

NCEP85T12
NCEP85T12

Pb Free Producthttp://www.ncepower.com NCEP85T15NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

6.4. ncep85t11.pdf Size:385K _ncepower

NCEP85T12
NCEP85T12

Pb Free Producthttp://www.ncepower.com NCEP85T11NCE N-Channel Super Trench Power MOSFET Description The NCEP85T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 6.5. ncep85t14d.pdf Size:355K _ncepower

NCEP85T12
NCEP85T12

Pb Free Producthttp://www.ncepower.com NCEP85T14DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

6.6. ncep85t16d.pdf Size:323K _ncepower

NCEP85T12
NCEP85T12

Pb Free Producthttp://www.ncepower.com NCEP85T16DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T16D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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