NCEP85T15. Аналоги и основные параметры
Наименование производителя: NCEP85T15
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 210 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 911 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
Тип корпуса: TO220
Аналог (замена) для NCEP85T15
- подборⓘ MOSFET транзистора по параметрам
NCEP85T15 даташит
ncep85t15.pdf
Pb Free Product http //www.ncepower.com NCEP85T15 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
ncep85t15d.pdf
http //www.ncepower.com NCEP85T15D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi
ncep85t16d.pdf
Pb Free Product http //www.ncepower.com NCEP85T16D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep85t12.pdf
Pb Free Product http //www.ncepower.com NCEP85T12 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
Другие MOSFET... NCEP60T20 , NCEP60T20A , NCEP60T20T , NCEP85T11 , NCEP85T12 , NCEP85T12D , NCEP85T14 , NCEP85T14D , RU7088R , NCEP85T16 , 2SK2960 , 2SK308 , 2SK3109-AZ , 2SK312 , 2SK313 , 2SK3218-01 , 2SK3221-AZ .
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Список транзисторов
Обновления
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