2SK3109-AZ - Даташиты. Аналоги. Основные параметры

isc N-Channel MOSFET Transistor 2SK3109-AZFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

isc N-Channel MOSFET Transistor 2SK3109-SFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3109-ZJFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3109SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device thatPART NUMBER PACKAGEfeatures a low on-state resistance and excellent2SK3109 TO-220ABswitching characteristics, and designed for high voltage2SK3109-S TO-262applications such as DC/DC converter.2SK3109-ZJ

isc N-Channel MOSFET Transistor 2SK3109FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO