Справочник MOSFET. 2SK3109-AZ

 

2SK3109-AZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3109-AZ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO263

 Аналог (замена) для 2SK3109-AZ

 

 

2SK3109-AZ Datasheet (PDF)

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 2sk3109-az.pdf

2SK3109-AZ 2SK3109-AZ

isc N-Channel MOSFET Transistor 2SK3109-AZFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 6.1. Size:282K  inchange semiconductor
 2sk3109-s.pdf

2SK3109-AZ 2SK3109-AZ

isc N-Channel MOSFET Transistor 2SK3109-SFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 6.2. Size:356K  inchange semiconductor
 2sk3109-zj.pdf

2SK3109-AZ 2SK3109-AZ

isc N-Channel MOSFET Transistor 2SK3109-ZJFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 7.1. Size:77K  nec
 2sk3109.pdf

2SK3109-AZ 2SK3109-AZ

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3109SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device thatPART NUMBER PACKAGEfeatures a low on-state resistance and excellent2SK3109 TO-220ABswitching characteristics, and designed for high voltage2SK3109-S TO-262applications such as DC/DC converter.2SK3109-ZJ

 7.2. Size:288K  inchange semiconductor
 2sk3109.pdf

2SK3109-AZ 2SK3109-AZ

isc N-Channel MOSFET Transistor 2SK3109FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

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