2SK3109-AZ - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK3109-AZ FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

isc N-Channel MOSFET Transistor 2SK3109-S FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3109-ZJ FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent 2SK3109 TO-220AB switching characteristics, and designed for high voltage 2SK3109-S TO-262 applications such as DC/DC converter. 2SK3109-ZJ

isc N-Channel MOSFET Transistor 2SK3109 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO