2SK3484-ZK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3484-ZK
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 30 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 16 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 0.125 Ohm
Тип корпуса: TO263
Аналог (замена) для 2SK3484-ZK
2SK3484-ZK Datasheet (PDF)
2sk3484-zk.pdf
isc N-Channel MOSFET Transistor 2SK3484-ZKFEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 125m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3484-z.pdf
isc N-Channel MOSFET Transistor 2SK3484-ZFEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 125m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk3484.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3484SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3484 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3484 TO-251 (MP-3)2SK3484-Z TO-252 (MP-3Z)FEATURES Low on-state resistance RDS(on)1 = 125 m MAX. (VGS = 10 V, ID = 8 A) RDS(
2sk3484.pdf
2SK3484www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V 15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise
2sk3484.pdf
isc N-Channel MOSFET Transistor 2SK3484FEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 125m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
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