2SK3759 - описание и поиск аналогов

2SK3759 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK3759 unit Switching Regulator Applications Low drain-source ON resistance R = 0.75 (typ.) DS (ON) High forward transfer admittance Y = 6.5S (typ.) fs 4.7max 4.7 max 10.5 max 10.5 max Low leakage current I = 100 A (V = 500 V) 3.84 0.2 DSS DS 1.3 3.84 0.2

isc N-Channel MOSFET Transistor 2SK3759 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 850m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high Unit mm frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this

2SK3754 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3754 Relay Drive, DC-DC Converter and Unit mm Motor Drive Applications 4.5-V gate drive Low drain-source ON resistance RDS (ON) = 71 m (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement-model V

2SK3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3757 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.9 (typ.) High forward transfer admittance Yfs = 1.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute

2SK3758 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK3758 unit Switching Regulator Applications 4.7max 4.7 max 10.5 max 10.5max Low drain-source ON resistance R = 1.35 (typ.) 3.84 0.2 DS (ON) 3.84 0.2 1.3 1.3 High forward transfer admittance Y = 3.5S (typ.) fs Low leakage current I = 100 A (V = 500 V) DSS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3753-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings Equivalent circuit

isc N-Channel MOSFET Transistor 2SK375L FEATURES Drain Current I = 1.0A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 4.0 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK375S FEATURES Drain Current I = 1.0A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 4.0 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3755 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid