2SK3892 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3892
Маркировка: K3892
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 40 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 22 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 50 nC
Время нарастания (tr): 60 ns
Выходная емкость (Cd): 456 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.062 Ohm
Тип корпуса: TO220F
2SK3892 Datasheet (PDF)
2sk3892.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs 2SK3892Silicon N-channel power MOSFETFor contactless relay, diving circuit for a solenoid,driving circuit for a motor, control equipment andswitching power supply Package Code Features TO-220D-A1 Pin Name Gate-source surrender voltage VGSS : 30 guaranteed 1: Gate Avalanc
2sk3892.pdf
isc N-Channel MOSFET Transistor 2SK3892FEATURESDrain Current : I = 22A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 62m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
2sk3899-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3891-01r.pdf
2SK3891-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless othe
3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf
www.DataSheet4U.com
2sk3899.pdf
SMD Type MOSFETMOS Field Effect Transistor2SK3899TO-263Unit: mm+0.24.57-0.2+0.11.27-0.1FeaturesLow On-state resistanceRDS(on)1 =5.3mMAX. (VGS =10 V, ID =42A)+0.10.1max1.27-0.1RDS(on)2 =6.5 mMAX. (VGS =4.5 V, ID =42A)Low C iss: Ciss = 5500 pF TYP. +0.10.81-0.12.541Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22Drain3 SourceAbsolute Maximum Rating
2sk3891-01r.pdf
isc N-Channel MOSFET Transistor 2SK3891-01RFEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
2sk3899-zk.pdf
isc N-Channel MOSFET Transistor 2SK3899-ZKFEATURESDrain Current : I = 84A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.3m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
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