ISCNH060D. Аналоги и основные параметры
Наименование производителя: ISCNH060D
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 90 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: TO252
Аналог (замена) для ISCNH060D
- подборⓘ MOSFET транзистора по параметрам
ISCNH060D даташит
..1. Size:263K inchange semiconductor
iscnh060d.pdf 

isc N-Channel MOSFET Transistor ISCNH060D FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R
9.1. Size:255K inchange semiconductor
iscnh320k.pdf 

isc N-Channel MOSFET Transistor ISCNH320K FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 135m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Low gate charge Fast switching speed Improved dv/dt capab
9.2. Size:286K inchange semiconductor
iscnh371d.pdf 

isc N-Channel MOSFET Transistor ISCNH371D FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
9.3. Size:356K inchange semiconductor
iscnh377b.pdf 

isc N-Channel MOSFET Transistor ISCNH377B FEATURES Drain Current I = 200A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
9.4. Size:288K inchange semiconductor
iscnh379p.pdf 

isc N-Channel MOSFET Transistor ISCNH379P FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 10 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
9.5. Size:580K inchange semiconductor
iscnh375w.pdf 

isc N-Channel MOSFET Transistor ISCNH375W FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
9.6. Size:260K inchange semiconductor
iscnh342p.pdf 

isc N-Channel MOSFET Transistor ISCNH342P FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Low gate charge Fast switching speed ABSOLUTE MAXIMUM RATINGS(
9.7. Size:261K inchange semiconductor
iscnh327p.pdf 

isc N-Channel MOSFET Transistor ISCNH327P FEATURES Drain Current I = 200A@ T =25 D C Drain Source Voltage- V = 85V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
9.8. Size:329K inchange semiconductor
iscnh340b.pdf 

isc N-Channel MOSFET Transistor ISCNH340B FEATURES Drain Current I = 135A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
9.9. Size:246K inchange semiconductor
iscnh345p.pdf 

isc N-Channel MOSFET Transistor ISCNH345P FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching Switching regulator, DC-DC co
9.10. Size:251K inchange semiconductor
iscnh346f.pdf 

isc N-Channel MOSFET Transistor ISCNH346F FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high efficiency switch mode power supply. ABSOLUTE
9.11. Size:356K inchange semiconductor
iscnh372b.pdf 

isc N-Channel MOSFET Transistor ISCNH372B FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
9.12. Size:302K inchange semiconductor
iscnh342w.pdf 

isc N-Channel MOSFET Transistor ISCNH342W FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Low gate charge Fast switching speed ABSOLUTE MAXIMUM RATINGS(
9.13. Size:304K inchange semiconductor
iscnh325w.pdf 

isc N-Channel MOSFET Transistor ISCNH325W FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 90m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A
9.14. Size:307K inchange semiconductor
iscnh339d.pdf 

isc N-Channel MOSFET Transistor ISCNH339D FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB
9.15. Size:286K inchange semiconductor
iscnh374d.pdf 

isc N-Channel MOSFET Transistor ISCNH374D FEATURES Drain Current I = 44A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
9.16. Size:283K inchange semiconductor
iscnh376l.pdf 

isc N-Channel MOSFET Transistor ISCNH376L FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 50m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
9.17. Size:272K inchange semiconductor
iscnh363n.pdf 

isc N-Channel MOSFET Transistor ISCNH363N FEATURES Drain Current I = 59A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 36m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A
9.18. Size:269K inchange semiconductor
iscnh310p.pdf 

isc N-Channel MOSFET Transistor ISCNH310P FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
9.19. Size:261K inchange semiconductor
iscnh373f.pdf 

isc N-Channel MOSFET Transistor ISCNH373F FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 6.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching Switching regulator, DC-DC conv
9.20. Size:304K inchange semiconductor
iscnh370w.pdf 

isc N-Channel MOSFET Transistor ISCNH370W FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 95m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A
9.21. Size:304K inchange semiconductor
iscnh328w.pdf 

isc N-Channel MOSFET Transistor ISCNH328W FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A
Другие MOSFET... 2SK896
, FMW60N070S2HF
, 60NM60L-T3P
, 60NM60L-T47
, 60NM60G-T3P
, 60NM60G-T47
, ISC60NM60L
, ISCD3NK80Z
, IRFP250
, FDN363N
, ISCNH363N
, ISCNH370W
, ISCNH371D
, ISCNH372B
, ISCNH373F
, ISCNH374D
, ISCNH375W
.
History: KNY3403A
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